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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices (Hardcover) Loot Price: R5,130
Discovery Miles 51 300
Repayment Terms: R481 pm x 12*
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Nitride Wide Bandgap Semiconductor Material and Electronic Devices (Hardcover): Yue Hao, Jin Feng Zhang, Jin Cheng Zhang

Nitride Wide Bandgap Semiconductor Material and Electronic Devices (Hardcover)

Yue Hao, Jin Feng Zhang, Jin Cheng Zhang

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Loot Price R5,130 Discovery Miles 51 300 | Repayment Terms: R481 pm x 12*

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

General

Imprint: Productivity Press
Country of origin: United States
Release date: October 2016
First published: 2017
Authors: Yue Hao • Jin Feng Zhang • Jin Cheng Zhang
Dimensions: 254 x 178 x 22mm (L x W x T)
Format: Hardcover - Cloth over boards
Pages: 392
ISBN-13: 978-1-4987-4512-3
Categories: Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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LSN: 1-4987-4512-1
Barcode: 9781498745123

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