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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices (Hardcover) Loot Price: R5,510

Discovery Miles 55 100

Repayment Terms: R516 pm x 12*

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices (Hardcover): Yue Hao, Jin Feng Zhang, Jin Cheng Zhang

Nitride Wide Bandgap Semiconductor Material and Electronic Devices (Hardcover)

Yue Hao, Jin Feng Zhang, Jin Cheng Zhang

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Loot Price R5,510 Discovery Miles 55 100 | Repayment Terms: R516 pm x 12*

Expected to ship within 12 - 17 working days

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

General

Imprint:	Productivity Press
Country of origin:	United States
Release date:	October 2016
First published:	2017
Authors:	Yue Hao • Jin Feng Zhang • Jin Cheng Zhang
Dimensions:	254 x 178 x 22mm (L x W x T)
Format:	Hardcover - Cloth over boards
Pages:	392
ISBN-13:	978-1-4987-4512-3
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Promotions
LSN:	1-4987-4512-1
Barcode:	9781498745123