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A review of the electrical properties, performance and physical
mechanisms of the main silicon-on-insulator (SOI) materials and
devices. Particular attention is paid to the reliability of SOI
structures operating in harsh conditions. The first part of the
book deals with material technology and describes the SIMOX and
ELTRAN technologies, the smart-cut technique, SiCOI structures and
MBE growth. The second part covers reliability of devices operating
under extreme conditions, with an examination of low and high
temperature operation of deep submicron MOSFETs and novel SOI
technologies and circuits, SOI in harsh environments and the
properties of the buried oxide. The third part deals with the
characterization of advanced SOI materials and devices, covering
laser-recrystallized SOI layers, ultrashort SOI MOSFETs and
nanostructures, gated diodes and SOI devices produced by a variety
of techniques. The last part reviews future prospects for SOI
structures, analyzing wafer bonding techniques, applications of
oxidized porous silicon, semi-insulating silicon materials,
self-organization of silicon dots and wires on SOI and some new
physical phenomena.
This proceedings volume archives the contributions of the speakers
who attended the NATO Advanced Research Workshop on "Science and
Technology of Semiconductor-On-Insulator Structures and Devices
Operating in a Harsh Environment" held at the Sanatorium Puscha
Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The
semiconductor industry has maintained a very rapid growth during
the last three decades through impressive technological
achievements which have resulted in products with higher
performance and lower cost per function. After many years of
development semiconductor-on-insulator materials have entered
volume production and will increasingly be used by the
manufacturing industry. The wider use of semiconductor (especially
silicon) on insulator materials will not only enable the benefits
of these materials to be further demonstrated but, also, will drive
down the cost of substrates which, in turn, will stimulate the
development of other novel devices and applications. In itself this
trend will encourage the promotion of the skills and ideas
generated by researchers in the Former Soviet Union and Eastern
Europe and their incorporation in future collaborations.
In Physical and Technical Problems of SOI Structures and Devices,
specialists in silicon-on-insulator technology from both East and
West meet for the first time, giving the reader the chance to
become acquainted with work from the former Soviet Union, hitherto
only available in Russian and barely available to western
scientists. Keynote lectures and state-of-the-art presentations
give a wide-ranging panorama of the challenges posed by SOI
materials and devices, material fabrication techniques,
characterisation, device and circuit issues.
This proceedings volume archives the contributions of the speakers
who attended the NATO Advanced Research Workshop on "Science and
Technology of Semiconductor-On-Insulator Structures and Devices
Operating in a Harsh Environment" held at the Sanatorium Puscha
Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The
semiconductor industry has maintained a very rapid growth during
the last three decades through impressive technological
achievements which have resulted in products with higher
performance and lower cost per function. After many years of
development semiconductor-on-insulator materials have entered
volume production and will increasingly be used by the
manufacturing industry. The wider use of semiconductor (especially
silicon) on insulator materials will not only enable the benefits
of these materials to be further demonstrated but, also, will drive
down the cost of substrates which, in turn, will stimulate the
development of other novel devices and applications. In itself this
trend will encourage the promotion of the skills and ideas
generated by researchers in the Former Soviet Union and Eastern
Europe and their incorporation in future collaborations.
This proceedings volume contains the contributions of the speakers
who attended the NATO Advanced Research Workshop on "Perspectives,
Science and Technologies for Novel Silicon on Insulator Devices"
held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to
15 October 1998. This meeting was the second NATO Silicon on
Insulator (SOl) Workshop to be held in st the Ukraine where the
first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed
upon the physical and technical problems to be addressed in order
to exploit the advantages of incorporating SOl materials in device
and sensor technologies. On this occasion emphasis was placed upon
firstly, promoting the use of SOl substrates for a range of novel
device and circuit applications and secondly, addressing the
economic issues of incorporating SOl processing technologies and
device technologies within the framework of the resources available
within the laboratories and factories of the Newly Independent
States (NIS). The primary goal of both workshops has been the
breaking of the barriers that inhibit closer collaboration between
scientists and engineers in the NATO countries and the NIS. Indeed,
it was a pleasure for attendees at the first meeting to renew
acquaintances and for the first time attendees to make new contacts
and enjoy the warm hospitality offered by our hosts in Kyiv. An
outcome was the forging of new links and concrete proposals for
future collaborations.
A review of the electrical properties, performance and physical
mechanisms of the main silicon-on-insulator (SOI) materials and
devices. Particular attention is paid to the reliability of SOI
structures operating in harsh conditions. The first part of the
book deals with material technology and describes the SIMOX and
ELTRAN technologies, the smart-cut technique, SiCOI structures and
MBE growth. The second part covers reliability of devices operating
under extreme conditions, with an examination of low and high
temperature operation of deep submicron MOSFETs and novel SOI
technologies and circuits, SOI in harsh environments and the
properties of the buried oxide. The third part deals with the
characterization of advanced SOI materials and devices, covering
laser-recrystallized SOI layers, ultrashort SOI MOSFETs and
nanostructures, gated diodes and SOI devices produced by a variety
of techniques. The last part reviews future prospects for SOI
structures, analyzing wafer bonding techniques, applications of
oxidized porous silicon, semi-insulating silicon materials,
self-organization of silicon dots and wires on SOI and some new
physical phenomena.
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