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Integrated Silicon-Metal Systems at the Nanoscale - Applications in Photonics, Quantum Computing, Networking, and Internet... Integrated Silicon-Metal Systems at the Nanoscale - Applications in Photonics, Quantum Computing, Networking, and Internet (Paperback)
Munir H. Nayfeh, Ammar Nayfeh
R4,573 Discovery Miles 45 730 Ships in 10 - 15 working days

Integrated Silicon-Metal Systems at the Nanoscale: Applications in Photonics, Quantum Computing, Networking, and Internet is a comprehensive guide to the interaction, materials, and functional integration at the nanoscale, of the silicon-metal binary system and a variety of emerging and next-generation advanced device applications, from energy and electronics, to sensing, to quantum computing and quantum internet networks. The book guides the readers through advanced techniques and etching processes, combining underlying principles, materials science, design, and operation of metal-Si nanodevices. Each chapter focuses on a specific use of integrated metal-silicon nanostructures, including storage and resistive next-generation nano memory and transistors, photo and molecular sensing, harvest and storage device electrodes, phosphor light converters, and hydrogen fuel cells, as well as future application areas, such as spin transistors, quantum computing, hybrid quantum devices, and quantum engineering, networking, and internet. This is a valuable resource for researchers and advanced students in nanomaterials and nanotechnology, electronics engineering, quantum computing, physics, and materials engineering, as well as for materials engineers, industrial scientists, and R&D professionals with an interest in silicon-metal nanodevices for state-of-the-art applications.

Nanomaterials-Based Charge Trapping Memory Devices (Paperback): Ammar Nayfeh, Nazek El-Atab Nanomaterials-Based Charge Trapping Memory Devices (Paperback)
Ammar Nayfeh, Nazek El-Atab
R3,574 Discovery Miles 35 740 Ships in 10 - 15 working days

Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices.

Silicon-Germanium Alloys for Photovoltaic Applications (Paperback): Ammar Nayfeh, Sabina Abdul Hadi Silicon-Germanium Alloys for Photovoltaic Applications (Paperback)
Ammar Nayfeh, Sabina Abdul Hadi
R3,501 Discovery Miles 35 010 Ships in 10 - 15 working days

Silicon-Germanium Alloys for Photovoltaic Applications provides a comprehensive look at the use of Silicon-Germanium alloys Si1-xGex in photovoltaics. Different methods of Si1-xGex alloy deposition are reviewed, including their optical and material properties as function of Ge% are summarized, with SiGe use in photovoltaic applications analyzed. Fabrication and characterization of single junction Si1-xGex solar cells on Si using a-Si as emitter is discussed, with a focus on the effect of different Ge%. Further, the book highlights the use Si1-xGex as a template for lattice matched deposition of III-V layers on Si, along with its challenges and benefits, including financial aspects. Finally, fabrication and characterization of single junction GaAsxP1-x cells on Si via Si1-xGex is discussed, along with the simulation and modeling of graded SiGe layers and experimental model verification.

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