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Silicon-based microelectronics has steadily improved in various
performance-to-cost metrics. But after decades of processor
scaling, fundamental limitations and considerable new challenges
have emerged. The integration of compound semiconductors is the
leading candidate to address many of these issues and to continue
the relentless pursuit of more powerful, cost-effective processors.
III-V Compound Semiconductors: Integration with Silicon-Based
Microelectronics covers recent progress in this area, addressing
the two major revolutions occurring in the semiconductor industry:
integration of compound semiconductors into Si microelectronics,
and their fabrication on large-area Si substrates. The authors
present a scientific and technological exploration of GaN, GaAs,
and III-V compound semiconductor devices within Si
microelectronics, building a fundamental foundation to help readers
deal with relevant design and application issues. Explores
silicon-based CMOS applications developed within the cutting-edge
DARPA program Providing an overview of systems, devices, and their
component materials, this book: Describes structure, phase
diagrams, and physical and chemical properties of III-V and Si
materials, as well as integration challenges Focuses on the key
merits of GaN, including its importance in commercializing a new
class of power diodes and transistors Analyzes more traditional
III-V materials, discussing their merits and drawbacks for device
integration with Si microelectronics Elucidates properties of III-V
semiconductors and describes approaches to evaluate and
characterize their attributes Introduces novel technologies for the
measurement and evaluation of material quality and device
properties Investi
Silicon-based microelectronics has steadily improved in various
performance-to-cost metrics. But after decades of processor
scaling, fundamental limitations and considerable new challenges
have emerged. The integration of compound semiconductors is the
leading candidate to address many of these issues and to continue
the relentless pursuit of more powerful, cost-effective processors.
III-V Compound Semiconductors: Integration with Silicon-Based
Microelectronics covers recent progress in this area, addressing
the two major revolutions occurring in the semiconductor industry:
integration of compound semiconductors into Si microelectronics,
and their fabrication on large-area Si substrates. The authors
present a scientific and technological exploration of GaN, GaAs,
and III-V compound semiconductor devices within Si
microelectronics, building a fundamental foundation to help readers
deal with relevant design and application issues. Explores
silicon-based CMOS applications developed within the cutting-edge
DARPA program Providing an overview of systems, devices, and their
component materials, this book: * Describes structure, phase
diagrams, and physical and chemical properties of III-V and Si
materials, as well as integration challenges * Focuses on the key
merits of GaN, including its importance in commercializing a new
class of power diodes and transistors * Analyzes more traditional
III-V materials, discussing their merits and drawbacks for device
integration with Si microelectronics * Elucidates properties of
III-V semiconductors and describes approaches to evaluate and
characterize their attributes * Introduces novel technologies for
the measurement and evaluation of material quality and device
properties * Investigates state-of-the-art optical devices, LEDs,
Si photonics, high-speed, high-power III-V materials and devices,
III-V solar cell devices, and more Assembling the work of renowned
experts, this is a reference for scientist
To meet increasingly challenging and complex system requirements,
as well as to stay cost effective, it is not enough to use one
single semiconductor materials system. Major efforts have,
therefore, been made to combine the low cost and well established
Si-based CMOS processing attributes with the superior performance
attributes of compound semiconductors (CS). Such a combination will
enable performance superior to that achievable with either CS and
CMOS alone, with CMOS affordability. The strong and increasing
interest in GaN, GaAs, SiC and related alloys on silicon substrates
indicates the worldwide importance of these materials and devices.
This book represents the latest technical advancements and
information on III-V materials and devices on silicon substrates
from universities, national laboratories and industries worldwide.
Topics include: GaN-based electronic devices and sensors on
silicon; GaN-based optical devices on silicon; GaN and related
alloys on silicon growth and integration techniques; conventional
III-V materials and devices on silicon; and silicon and other
materials on silicon.
To meet increasingly challenging and complex system requirements,
as well as to stay cost effective, it is not enough to use one
single semiconductor materials system. Major efforts have,
therefore, been made to combine the low cost and well established
Si-based CMOS processing attributes with the superior performance
attributes of compound semiconductors (CS). Such a combination will
enable performance superior to that achievable with either CS and
CMOS alone, with CMOS affordability. The strong and increasing
interest in GaN, GaAs, SiC and related alloys on silicon substrates
indicates the worldwide importance of these materials and devices.
This book represents the latest technical advancements and
information on III-V materials and devices on silicon substrates
from universities, national laboratories and industries worldwide.
Topics include: GaN-based electronic devices and sensors on
silicon; GaN-based optical devices on silicon; GaN and related
alloys on silicon growth and integration techniques; conventional
III-V materials and devices on silicon; and silicon and other
materials on silicon.
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