This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applications. Written by professionals with thorough expertise in similar broad area, the book is intended to address multiple aspects of carbon research in a single compiled edition. It targets professors, scientists and researchers belonging to the areas of physics, chemistry, engineering, biology and medicine, and working on theory, experiment and applications of carbon nanomaterials.

This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applications. Written by professionals with thorough expertise in similar broad area, the book is intended to address multiple aspects of carbon research in a single compiled edition. It targets professors, scientists and researchers belonging to the areas of physics, chemistry, engineering, biology and medicine, and working on theory, experiment and applications of carbon nanomaterials.

Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.