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The demand for ever smaller and portable electronic devices has
driven metal oxide semiconductor-based (CMOS) technology to its
physical limit with the smallest possible feature sizes. This
presents various size-related problems such as high power leakage,
low-reliability, and thermal effects, and is a limit on further
miniaturization. To enable even smaller electronics, various
nanodevices including carbon nanotube transistors, graphene
transistors, tunnel transistors and memristors (collectively called
post-CMOS devices) are emerging that could replace the traditional
and ubiquitous silicon transistor. This book explores these
nanoelectronics at the circuit and systems levels including
modelling and design approaches and issues. Topics covered include
self-healing analog and radio frequency circuits; on-chip gate
delay variability measurement in scaled technology node; nanoscale
finFET devices for PVT aware SRAM; data stability and write ability
enhancement techniques for finFET SRAM circuits; low-leakage
techniques for nanoscale CMOS circuits; thermal effects in carbon
nanotube VLSI interconnects; lumped electro-thermal modeling and
analysis of carbon nanotube interconnects; high-level synthesis of
digital integrated circuits in the nanoscale mobile electronics
era; SPICEless RTL design optimization of nanoelectronic digital
integrated circuits; green on-chip inductors for three-dimensional
integrated circuits; 3D network-on-chips; and DNA computing. This
book is essential reading for researchers, research-focused
industry designers/developers, and advanced students working on
next-generation electronic devices and circuits.
The demand for ever smaller and portable electronic devices has
driven metal oxide semiconductor-based (CMOS) technology to its
physical limit with the smallest possible feature sizes. This
presents various size-related problems such as high power leakage,
low-reliability, and thermal effects, and is a limit on further
miniaturization. To enable even smaller electronics, various
nanodevices including carbon nanotube transistors, graphene
transistors, tunnel transistors and memristors (collectively called
post-CMOS devices) are emerging that could replace the traditional
and ubiquitous silicon transistor. This book explores these
nanoelectronics at the device level including modelling and design.
Topics covered include high-k dielectrics; high mobility n and p
channels on gallium arsenide and silicon substrates using
interfacial misfit dislocation arrays; anodic metal-insulator-metal
(MIM) capacitors; graphene transistors; junction and doping free
transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based
logic libraries; multiple-independent-gate nanowire transistors;
carbon nanotubes for efficient power delivery; timing driven buffer
insertion for carbon nanotube interconnects; memristor modeling;
and neuromorphic devices and circuits. This book is essential
reading for researchers, research-focused industry
designers/developers, and advanced students working on
next-generation electronic devices and circuits.
Discovery of one-dimensional material carbon nanotubes in 1991 by
the Japanese physicist Dr. Sumio Iijima has resulted in voluminous
research in the field of carbon nanotubes for numerous
applications, including possible replacement of silicon used in the
fabrication of CMOS chips. One interesting feature of carbon
nanotubes is that these can be metallic or semiconducting with a
bandgap depending on their diameter. In search of non-classical
devices and related technologies, both carbon nanotube-based
field-effect transistors and metallic carbon nanotube interconnects
are being explored extensively for emerging logic devices and very
large-scale integration. Although various models for carbon
nanotube-based transistors and interconnects have been proposed in
the literature, an integrated approach to make them compatible with
the present simulators is yet to be achieved. This book makes an
attempt in this direction for the carbon-based electronics through
fundamentals of solid-state physics and devices.
Although existing nanometer CMOS technology is expected to remain
dominant for the next decade, new non-classical devices are being
developed as the potential replacements of silicon CMOS, in order
to meet the ever-present demand for faster, smaller, more efficient
integrate circuits. Many new devices are based on novel emerging
materials such as one-dimensional carbon nanotubes and
two-dimensional graphene, non-graphene two-dimensional materials,
and transition metal dichalcogenides. Such devices use on/off
operations based on quantum mechanical current transport, and so
their design and fabrication require an understanding of the
electronic structures of materials and technologies. Moreover, new
electronic design automation (EDA) tools and techniques need to be
developed based on integrating devices from emerging novel
material-based technologies. The aim of this book is to explore the
materials and design requirements of these emerging integrated
circuit technologies, and to outline their prospective
applications. It will be useful for academics and research
scientists interested in future directions and developments in
design, materials and applications of novel integrated circuit
technologies, and for research and development professionals
working at the cutting edge of integrated circuit development.
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