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This book provides comprehensive coverage of the materials
characteristics, process technologies, and device operations for
memory field-effect transistors employing inorganic or organic
ferroelectric thin films. This transistor-type ferroelectric memory
has interesting fundamental device physics and potentially large
industrial impact. Among various applications of ferroelectric thin
films, the development of nonvolatile ferroelectric random access
memory (FeRAM) has been most actively progressed since the late
1980s and reached modest mass production for specific application
since 1995. There are two types of memory cells in ferroelectric
nonvolatile memories. One is the capacitor-type FeRAM and the other
is the field-effect transistor (FET)-type FeRAM. Although the
FET-type FeRAM claims the ultimate scalability and nondestructive
readout characteristics, the capacitor-type FeRAMs have been the
main interest for the major semiconductor memory companies, because
the ferroelectric FET has fatal handicaps of cross-talk for random
accessibility and short retention time. This book aims to provide
the readers with development history, technical issues, fabrication
methodologies, and promising applications of FET-type ferroelectric
memory devices, presenting a comprehensive review of past, present,
and future technologies. The topics discussed will lead to further
advances in large-area electronics implemented on glass, plastic or
paper substrates as well as in conventional Si electronics. The
book is composed of chapters written by leading researchers in
ferroelectric materials and related device technologies, including
oxide and organic ferroelectric thin films.
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