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This book presents the art of advanced MOSFET modeling for
integrated circuit simulation and design. It provides the essential
mathematical and physical analyses of all the electrical,
mechanical and thermal effects in MOS transistors relevant to the
operation of integrated circuits. Particular emphasis is placed on
how the BSIM model evolved into the first ever industry standard
SPICE MOSFET model for circuit simulation and CMOS technology
development. The discussion covers the theory and methodology of
how a MOSFET model, or semiconductor device models in general, can
be implemented to be robust and efficient, turning device physics
theory into a production-worthy SPICE simulation model. Special
attention is paid to MOSFET characterization and model parameter
extraction methodologies, making the book particularly useful for
those interested or already engaged in work in the areas of
semiconductor devices, compact modeling for SPICE simulation, and
integrated circuit design.
BSIM-Bulk Mosfet Model for Wireless and Mixed-Mode ICs provides
in-depth knowledge of the internal operation of the model. The
authors not only discuss the fundamental core of the model, but
also provide details of the recent developments and new real-device
effect models. In addition, the book covers the parameter
extraction procedures, addressing geometrical scaling,
temperatures, and more. There is also a dedicated chapter on
extensive quality testing procedures and experimental results. This
book discusses every aspect of the model in detail, and hence will
be of significant use for the industry and academia. Those working
in the semiconductor industry often run into a variety of problems
like model non-convergence or non-physical simulation results. This
is largely due to a limited understanding of the internal
operations of the model as literature and technical manuals are
insufficient. This also creates huge difficulty in developing their
own IP models. Similarly, circuit designers and researcher across
the globe need to know new features available to them so that the
circuits can be more efficiently designed.
Circuit simulation is essential in integrated circuit design, and
the accuracy of circuit simulation depends on the accuracy of the
transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET
Model) has been selected as the first MOSFET model for
standardization by the Compact Model Council, a consortium of
leading companies in semiconductor and design tools. In the next
few years, many fabless and integrated semiconductor companies are
expected to switch from dozens of other MOSFET models to BSIM3.
This will require many device engineers and most circuit designers
to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's
Guide explains the detailed physical effects that are important in
modeling MOSFETs, and presents the derivations of compact model
expressions so that users can understand the physical meaning of
the model equations and parameters. It is the first book devoted to
BSIM3. It treats the BSIM3 model in detail as used in digital,
analog and RF circuit design. It covers the complete set of models,
i.e., I-V model, capacitance model, noise model, parasitics model,
substrate current model, temperature effect model and non
quasi-static model. MOSFET Modeling & BSIM3 User's Guide not
only addresses the device modeling issues but also provides a
user's guide to the device or circuit design engineers who use the
BSIM3 model in digital/analog circuit design, RF modeling,
statistical modeling, and technology prediction. This book is
written for circuit designers and device engineers, as well as
device scientists worldwide. It is also suitable as a reference for
graduate courses and courses in circuit design or device modelling.
Furthermore, it can be used as a textbook for industry courses
devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is
comprehensive and practical. It is balanced between the background
information and advanced discussion of BSIM3. It is helpful to
experts and students alike.
Circuit simulation is essential in integrated circuit design, and
the accuracy of circuit simulation depends on the accuracy of the
transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET
Model) has been selected as the first MOSFET model for
standardization by the Compact Model Council, a consortium of
leading companies in semiconductor and design tools. In the next
few years, many fabless and integrated semiconductor companies are
expected to switch from dozens of other MOSFET models to BSIM3.
This will require many device engineers and most circuit designers
to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's
Guide explains the detailed physical effects that are important in
modeling MOSFETs, and presents the derivations of compact model
expressions so that users can understand the physical meaning of
the model equations and parameters. It is the first book devoted to
BSIM3. It treats the BSIM3 model in detail as used in digital,
analog and RF circuit design. It covers the complete set of models,
i.e., I-V model, capacitance model, noise model, parasitics model,
substrate current model, temperature effect model and non
quasi-static model. MOSFET Modeling & BSIM3 User's Guide not
only addresses the device modeling issues but also provides a
user's guide to the device or circuit design engineers who use the
BSIM3 model in digital/analog circuit design, RF modeling,
statistical modeling, and technology prediction. This book is
written for circuit designers and device engineers, as well as
device scientists worldwide. It is also suitable as a reference for
graduate courses and courses in circuit design or device modelling.
Furthermore, it can be used as a textbook for industry courses
devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is
comprehensive and practical. It is balanced between the background
information and advanced discussion of BSIM3. It is helpful to
experts and students alike.
This book is the first to explain FinFET modeling for IC
simulation and the industry standard for FinFET modeling BSIM-CMG.
It gives a foundation on the physics and operation of FinFET,
explaining the need to go from planar to 3D architecture. It then
covers detailed aspects of the BSIMCMG model such as surface
potential, charge and current calculations. A dedicated chapter on
parameter extraction procedures provides a step-by-step approach
for the efficient extraction of model parameters. This book is an
indispensible reference and handbook for device and modeling
engineers, circuit designers and students. With this book you will
learn: Why you should use FinFET The physics and operation of
FinFET Details of the FinFET standard model (BSIM-CMG) Parameter
extraction in BSIM-CMG FinFET circuit design and simulation
Chenming Hu is the lead inventor and developer of FinFET
The first book on the industry-standard FinFET model -
BSIM-CMG
The authors are developers of the BSIM-CM standard model,
providing an Experts insight into the specifications of the
standard"
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps
readers develop an understanding of a FDSOI device and its
simulation model. It covers the physics and operation of the FDSOI
device, explaining not only how FDSOI enables further scaling, but
also how it offers unique possibilities in circuits. Following
chapters cover the industry standard compact model BSIM-IMG for
FDSOI devices. The book addresses core surface-potential
calculations and the plethora of real devices and potential
effects. Written by the original developers of the industrial
standard model, this book is an excellent reference for the new
BSIM-IMG compact model for emerging FDSOI technology. The authors
include chapters on step-by-step parameters extraction procedure
for BSIM-IMG model and rigorous industry grade tests that the
BSIM-IMG model has undergone. There is also a chapter on analog and
RF circuit design in FDSOI technology using the BSIM-IMG model.
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