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Just over 25 years ago the first laser-excited Raman spectrum of
any crystal was obtained. In November 1964, Hobden and Russell
reported the Raman spectrum of GaP and later, in June 1965, Russell
published the Si spectrum. Then, in July 1965, the forerunner of a
series of meetings on light scattering in solids was held in Paris.
Laser Raman spectroscopy of semiconductors was at the forefront in
new developments at this meeting. Similar meetings were held in
1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and
apart from the multidisciplinary biennial International Conference
on Raman Spectroscopy there has been no special forum for experts
in light scattering spectroscopy of semiconductors to meet and
discuss latest developments. Meanwhile, technological advances in
semiconductor growth have given rise to a veritable renaissance in
the field of semiconductor physics. Light scattering spectroscopy
has played a crucial role in the advancement of this field,
providing valuable information about the electronic, vibrational
and structural properties both of the host materials, and of
heterogeneous composite structures. On entering a new decade, one
in which technological advances in lithography promise to open even
broader horirons for semiconductor physics, it seemed to us to be
an ideal time to reflect on the achievements of the past decade, to
be brought up to date on the current state-of-the-art, and to catch
some glimpses of where the field might be headed in the 1990s.
Remarkable advances in semiconductor growth and processing
technologies continue to have a profound impact on condensed-matter
physics and to stimulate the invention of novel optoelectronic
effects. Intensive research on the behaviors of free carriers has
been carried out in the two-dimensional systems of semiconductor
heterostructures and in the one and zero-dimensional systems of
nanostructures created by the state-of-the-art fabrication methods.
These studies have uncovered unexpected quantum mechanical
correlations that arise because of the combined effects of strong
electron-electron interactions and wave function confinement
associated with reduced dimensionality. The investigations of these
phenomena are currently at the frontiers of condensed-matter
physics. They include areas like the fractional quantum Hall
effect, the dynamics of electrons on an ultra short (femtosecond)
time scale, electron behavior in quantum wires and dots, and
studies of electron tunneling phenomena in ultra small
semiconductor structures. Optical techniques have made important
contributions to these fields in recent years, but there has been
no coherent review of this work until now. The book provides an
overview of these recent developments that will be of interest to
semiconductor materials scientists in university, government and
industrial laboratories.
The NATO Special Programme Panel on Condensed Systems of Low
Dimensionality began its work in 1985 at a time of considerable
activity in the field. The Panel has since funded many Advanced
Research Workshops, Advanced Study Institutes, Cooperative Research
Grants and Research Visits across the breadth of its remit, which
stretches from self-organizing organic molecules to semiconductor
structures having two, one and zero dimensions. The funded
activities, especially the workshops, have allowed researchers from
within NATO countries to exchange ideas and work together at a
period of development of the field when such interactions are most
valuable. Such timely support has undoubtedly assisted the
development of national programs, particularly in the countries of
the alliance wishing to strengthen their science base. A closing
Workshop to mark the end of the Panel's activities was organized in
Marmaris, Turkey from April 23-27, 1990, with the same title as the
Panel: Condensed systems of Low Dimensionality. This volume
contains papers presented at that meeting, which sought to bring
together chemists, physicists and engineers from across the
spectrum of the Panel's activities to discuss topics of current
interest in their special fields and to exchange ideas about the
effects of low dimensionality. As the following pages show, this is
a topic of extraordinary interest and challenge which produces
entirely new scientific phenomena, and at the same time offers the
possibility of novel technological applications.
A physics book that covers the optical properties of
quantum-confined semiconductor nanostructures from both the
theoretical and experimental points of view together with
technological applications. Topics to be reviewed include quantum
confinement effects in semiconductors, optical adsorption and
emission properties of group IV, III-V, II-VI semiconductors,
deep-etched and self assembled quantum dots, nanoclusters, and
laser applications in optoelectronics.
A physics book that covers the optical properties of
quantum-confined semiconductor nanostructures from both the
theoretical and experimental points of view together with
technological applications. Topics to be reviewed include quantum
confinement effects in semiconductors, optical adsorption and
emission properties of group IV, III-V, II-VI semiconductors,
deep-etched and self assembled quantum dots, nanoclusters, and
laser applications in optoelectronics.
Just over 25 years ago the first laser-excited Raman spectrum of
any crystal was obtained. In November 1964, Hobden and Russell
reported the Raman spectrum of GaP and later, in June 1965, Russell
published the Si spectrum. Then, in July 1965, the forerunner of a
series of meetings on light scattering in solids was held in Paris.
Laser Raman spectroscopy of semiconductors was at the forefront in
new developments at this meeting. Similar meetings were held in
1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and
apart from the multidisciplinary biennial International Conference
on Raman Spectroscopy there has been no special forum for experts
in light scattering spectroscopy of semiconductors to meet and
discuss latest developments. Meanwhile, technological advances in
semiconductor growth have given rise to a veritable renaissance in
the field of semiconductor physics. Light scattering spectroscopy
has played a crucial role in the advancement of this field,
providing valuable information about the electronic, vibrational
and structural properties both of the host materials, and of
heterogeneous composite structures. On entering a new decade, one
in which technological advances in lithography promise to open even
broader horirons for semiconductor physics, it seemed to us to be
an ideal time to reflect on the achievements of the past decade, to
be brought up to date on the current state-of-the-art, and to catch
some glimpses of where the field might be headed in the 1990s.
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