The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail. These physics-based MOSFET models are compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and circuits. Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of the different modeling methodologies found in the preceding chapters.

The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

From typical metrology parameters for common wireless and microwave components to the implementation of measurement benches, this introduction to metrology contains all the key information on the subject. Using it, readers will be able to: * Interpret and measure most of the parameters described in a microwave component's datasheet * Understand the practical limitations and theoretical principles of instrument operation * Combine several instruments into measurement benches for measuring microwave and wireless quantities. Several practical examples are included, demonstrating how to measure intermodulation distortion, error vector magnitude, S-parameters and large signal waveforms. Each chapter then ends with a set of exercises, allowing readers to test their understanding of the material covered and making the book equally suited for course use and for self-study.

The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail. These physics-based MOSFET models are compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and circuits. Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of the different modeling methodologies found in the preceding chapters.

The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

If you are an engineer or RF designer working with wireless transmitter power amplifier models, this comprehensive and up-to-date review of nonlinear theory and power amplifier modeling techniques is an absolute must-have. Including a detailed treatment of nonlinear theory, as well as chapters on memory effects, implementation in commercial circuit simulators, and validation, this one-stop reference makes power amplifier modeling more accessible by connecting the mathematics with the practicalities of RF power amplifier design. Uniquely, the book explains how systematically to evaluate a model s accuracy and validity, compares model types and offers recommendations as to which model to use in which situation.

This reference, written by leading authorities in the field, gives basic theory, implementation details, advanced research, and applications of RF and microwave in healthcare and biosensing. It first provides a solid understanding of the fundamentals with coverage of the basics of microwave engineering and the interaction between electromagnetic waves and biomaterials. It then presents the state-of-the-art development in microwave biosensing, implantable devices -including applications of microwave technology for sensing biological tissues - and medical diagnosis, along with applications involving remote patient monitoring. this book is an ideal reference for RF and microwave engineer working on, or thinking of working on, the applications of RF and Microwave technology in medicine and biology. Learn: The fundamentals of RF and microwave engineering in healthcare and biosensing How to combine biological and medical aspects of the field with underlying engineering concepts How to implement microwave biosensing for material characterization and cancer diagnosis Applications and functioning of wireless implantable biomedical devices and microwave non-contact biomedical radars How to combine devices, systems, and methods for new practical applications