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This book discusses the processing and properties of silicene,
including the historical and theoretical background of silicene,
theoretical predictions, the synthesis and experimental properties
of silicene and the potential applications and further
developments. It also presents other similar monolayer materials,
like germanene and phosphorene. Silicene, a new silicon allotrope
with a graphene-like, honeycomb structure, has recently attracted
considerable interest, because its topology affords it the same
remarkable electronic properties as those of graphene.
Additionally, silicene may have the potential advantage of being
easily integrated in current Si-based nano/micro-electronics,
offering novel technological applications. Silicene was
theoretically conjectured a few years ago as a stand-alone
material. However, it does not exist in nature and had to be
synthesized on a substrate. It has since been successfully
synthesized and multi-layer silicene structures are already being
discussed. Within just a few years, silicene is now on the brink of
technological applications in electronic devices.
This concise book offers an essential introduction and reference
guide for the many newcomers to the field of physics of elemental
2D materials. Silicene and related materials are currently among
the most actively studied materials, especially following the first
experimental synthesis on substrates in 2012. Accordingly, this
primer introduces and reviews the most crucial developments
regarding silicene from both theoretical and experimental
perspectives. At the same time the reader is guided through the
extensive body of relevant foundational literature. The text starts
with a brief history of silicene, followed by a comparison of the
bonding nature in silicon versus carbon atoms. Here, a simple but
robust framework is established to help the reader follow the
concepts presented throughout the book. The book then presents the
atomic and electronic structure of free-standing silicene, followed
by an account of the experimental realization of silicene on
substrates. This topic is subsequently developed further to discuss
various reconstructions that silicene acquires due to interactions
with the substrate and how such effects are mirrored in the
electronic properties. Next the book examines the dumbbell
structure that is the key to understanding the growth mechanism and
atomic structure of multilayer silicene. Last but not least, it
addresses similar effects in other elemental 2D materials from
group IV (germanene, stanane), group V (phosphorene) and group III
(borophene), as well as transition metal dichalcogenides and other
compositions, so as to provide a general comparative overview of
their electronic properties.
The trend towards miniaturisation of microelectronic devices and
the search for exotic new optoelectronic devices based on
multilayers confer a crucial role on semiconductor interfaces.
Great advances have recently been achieved in the elaboration of
new thin film materials and in the characterization of their
interfacial properties, down to the atomic scale, thanks to the
development of sophisticated new techniques. This book is a
collection of lectures that were given at the International Winter
School on Semiconductor Interfaces: Formation and Properties held
at the Centre de Physique des Rouches from 24 February to 6 March,
1987. The aim of this Winter School was to present a comprehensive
review of this field, in particular of the materials and methods,
and to formulate recom mendations for future research. The
following topics are treated: (i) Interface formation. The key
aspects of molecular beam epitaxy are emphasized, as well as the
fabrication of artificially layered structures, strained layer
superlattices and the tailoring of abrupt doping profiles. (ii)
Fine characterization down to the atomic scale using recently devel
oped, powerful techniques such as scanning tunneling microscopy,
high reso lution transmission electron microscopy, glancing
incidence x-ray diffraction, x-ray standing waves, surface extended
x-ray absorption fine structure and surface extended energy-loss
fine structure. (iii) Specific physical properties of the
interfaces and their prospective applications in devices. We wish
to thank warmly all the lecturers and participants, as well as the
organizing committee, who made this Winter School a success."
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