The interaction of semiconductor surfaces with deposited metals is very important for understanding many aspects of the behavior of microelectronic devices. The early stages of metal-semiconductor interface formation are amenable to analysis with surface sensitive techniques. The most important characteristic of metal semiconductor interface is nature of the potential barrier between the Fermi level in the metal and the majority carrier band edge of semiconductor of that interface. The study of metal / semiconductor (Si) reactions are of great importance present in every semiconductor device.The present book is an outcome of investigations of structural, morphological, magnetic and electrical behaviour of metal (Co, Cr, Ni) / semiconductor (Si) system.

In the area of energy technology, we find hydrogen (1) in gaseous, liquid, or solid hydrocarbons; (2) in nuclear fission and fusion processes and, (3) as synthetic fuel produced by dissociation of H2O or hydrocarbons using primary energy. The gate to use hydrogen as a fuel opens through the storage of hydrogen. There are number of ways of storing hydrogen but the most practical method for onboard application is 'Metal Hydride'. Recently Zirconium based alloys have attracted a great deal of attention for their substantial hydrogen storage capacity. But the high stabilities of these hydrides as indicated by their high enthalpy values make these alloys unsuitable for hydrogen storage applications. The present book is an outcome of the research efforts to increase the equilibrium pressure and thus to reduce the stability of their hydrides. Another purpose of this study is to obtain knowledge of structural and magnetic characteristics of the alloys and relevant hydrides.