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Semiconductors lie at the heart of some of the most important
industries and technologies of the twentieth century. The
complexity of silicon integrated circuits is increasing
considerably because of the continuous dimensional shrinkage to
improve efficiency and functionality. This evolution in design
rules poses real challenges for the materials scientists and
processing engineers. Materials, defects and processing now have to
be understood in their totality. World experts discuss, in this
volume, the crucial issues facing lithography, ion implication and
plasma processing, metallization and insulating layer quality, and
crystal growth. Particular emphasis is placed upon silicon, but
compound semiconductors and photonic materials are also
highlighted. The fundamental concepts of phase stability,
interfaces and defects play a key role in understanding these
crucial issues. These concepts are reviewed in a crucial fashion.
This book is an outcome of the NATO institute on surface
modification which was held in Trevi, 1981. Surface modification
and alloying by ion, electron or laser beams is proving to be one
of the most burgeoning areas of materials science. The field covers
such diverse areas as integrated circuit processing to fabricating
wear and corrosion resistant surfaces on mechanical components. The
common scientific questions of interest are the microstructures by
the different energy deposition techniques. and associated physical
properties produced The chapters constitute a critical review of
the various subjects covered at Trevi. Each chapter author took
responsibility for the overall review and used contributions from
the many papers presented at the meeting; each participant gave a
presentation. The contributors are listed at the start of each
chapter. We took this approach to get some order in a large and
diverse field. We are indebted to all the contributors, in
particular the chapter authors for working the many papers into
coherent packages; to Jim Mayer for hosting a workshop of chapter
authors at Cornell and to Ian Bubb who did a sterling job in
working over some of the manuscripts. Our special thanks are due to
the text processing center at Bell Labs who took on the task of
assembling the book. In particular Karen Lieb and Beverly Heravi
typed the whole manuscript and had the entire book phototypeset
using the Bell Laboratories UNIX (TM) system.
Semiconductors lie at the heart of some of the most important
industries and technologies of the twentieth century. The
complexity of silicon integrated circuits is increasing
considerably because of the continuous dimensional shrinkage to
improve efficiency and functionality. This evolution in design
rules poses real challenges for the materials scientists and
processing engineers. Materials, defects and processing now have to
be understood in their totality. World experts discuss, in this
volume, the crucial issues facing lithography, ion implication and
plasma processing, metallization and insulating layer quality, and
crystal growth. Particular emphasis is placed upon silicon, but
compound semiconductors and photonic materials are also
highlighted. The fundamental concepts of phase stability,
interfaces and defects play a key role in understanding these
crucial issues. These concepts are reviewed in a crucial fashion.
The MRS Symposium Proceeding series is an internationally
recognised reference suitable for researchers and practitioners.
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