This book covers the thermodynamic foundations of inorganic materials science and the controlled synthesis of inorganic materials. A new thermodynamic approach to the non-stoichiometry of crystalline solids, known as vapor pressure scanning, has been developed by the author and is described in detail in this book. It is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. This approach has been tested on a number of inorganic materials and has been shown to have an unparalleled precision (up to 10-4 at.%) in the determination of non-stoichiometry directly at high temperatures (up to 1200° C). Along with the results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, IV-VI semiconductors) are also discussed.

As part of the global Governing Uranium Project headed by the Danish Institute for International Studies (DIIS), the Center for Strategic and International Studies (CSIS) analyzed U.S. experiences with the security of its "front-end" uranium industry. This report examines current U.S. regulation and industry practices regarding security measures and controls over natural uranium prior to enrichment. Topics include prudent management practices, export-import controls, transportation, physical protection, and material accounting. The report highlights security analysis on uranium mining, milling, and conversion, which have historically enjoyed less proliferation scrutiny than other components of the nuclear fuel cycle.

This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. The technique is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. Alongside test results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, V-VI semiconductors) are also discussed.