This book presents a new and promising technique to grow single
crystalline compound semiconductor materials with defined
stoichometry. The technique is based on the high-precision
experimental determination of the boundaries of the single-phase
volume of the solid in the pressure-temperature-composition P-T-X
phase space. Alongside test results obtained by the author and his
colleagues, the P-T-X diagrams of other important materials (e.g.,
III-V, V-VI semiconductors) are also discussed.
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