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The discovery of bright visible light emission from porous silicon
has opened the door to various nanometer sized silicon structures
where the confinement of carriers gives rise to interesting
physical properties. While the high efficiency of the light
emission in the visible range is the common and the most prominent
feature, their structures display similar properties with other
highly divided materials (even non semiconductors), and then
justify a multidisciplinary approach. This along with potential
applications has attracted a large number of researchers followed
by students to be trained. Until now international conferences have
provided the exchange of information but have remained highly
specialised so it was time to give thought to the organisation of
topical and advanced lectures where the multidisciplinarity and the
didactic approach are paramount. L'ecole des Houches was ideally
devoted to that purpose. The meeting : " Luminescence of porous
silicon and silicon nanostructures" was the first international
school on this topic but some aspects in the organisation and the
attendance have given an international workshop flavor to it. The
school by itself has trained 82 "students", most of them were
students starting their Ph. D thesis. 50% were French citizens and
the other represented countries were Germany, England, USA,
Czechoslovakia, The Netherlands, Italy, Japan, Poland, Spain,
Canada, Brazil, India and Russia.
The trend towards miniaturisation of microelectronic devices and
the search for exotic new optoelectronic devices based on
multilayers confer a crucial role on semiconductor interfaces.
Great advances have recently been achieved in the elaboration of
new thin film materials and in the characterization of their
interfacial properties, down to the atomic scale, thanks to the
development of sophisticated new techniques. This book is a
collection of lectures that were given at the International Winter
School on Semiconductor Interfaces: Formation and Properties held
at the Centre de Physique des Rouches from 24 February to 6 March,
1987. The aim of this Winter School was to present a comprehensive
review of this field, in particular of the materials and methods,
and to formulate recom mendations for future research. The
following topics are treated: (i) Interface formation. The key
aspects of molecular beam epitaxy are emphasized, as well as the
fabrication of artificially layered structures, strained layer
superlattices and the tailoring of abrupt doping profiles. (ii)
Fine characterization down to the atomic scale using recently devel
oped, powerful techniques such as scanning tunneling microscopy,
high reso lution transmission electron microscopy, glancing
incidence x-ray diffraction, x-ray standing waves, surface extended
x-ray absorption fine structure and surface extended energy-loss
fine structure. (iii) Specific physical properties of the
interfaces and their prospective applications in devices. We wish
to thank warmly all the lecturers and participants, as well as the
organizing committee, who made this Winter School a success."
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