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This book systematically introduces physical characteristics and
implementations of III-nitride wide bandgap semiconductor materials
and electronic devices, with an emphasis on high-electron-mobility
transistors (HEMTs). The properties of nitride semiconductors make
the material very suitable for electronic devices used in microwave
power amplification, high-voltage switches, and high-speed digital
integrated circuits.
This book systematically introduces physical characteristics and
implementations of III-nitride wide bandgap semiconductor materials
and electronic devices, with an emphasis on high-electron-mobility
transistors (HEMTs). The properties of nitride semiconductors make
the material very suitable for electronic devices used in microwave
power amplification, high-voltage switches, and high-speed digital
integrated circuits.
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