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To meet increasingly challenging and complex system requirements,
as well as to stay cost effective, it is not enough to use one
single semiconductor materials system. Major efforts have,
therefore, been made to combine the low cost and well established
Si-based CMOS processing attributes with the superior performance
attributes of compound semiconductors (CS). Such a combination will
enable performance superior to that achievable with either CS and
CMOS alone, with CMOS affordability. The strong and increasing
interest in GaN, GaAs, SiC and related alloys on silicon substrates
indicates the worldwide importance of these materials and devices.
This book represents the latest technical advancements and
information on III-V materials and devices on silicon substrates
from universities, national laboratories and industries worldwide.
Topics include: GaN-based electronic devices and sensors on
silicon; GaN-based optical devices on silicon; GaN and related
alloys on silicon growth and integration techniques; conventional
III-V materials and devices on silicon; and silicon and other
materials on silicon.
To meet increasingly challenging and complex system requirements,
as well as to stay cost effective, it is not enough to use one
single semiconductor materials system. Major efforts have,
therefore, been made to combine the low cost and well established
Si-based CMOS processing attributes with the superior performance
attributes of compound semiconductors (CS). Such a combination will
enable performance superior to that achievable with either CS and
CMOS alone, with CMOS affordability. The strong and increasing
interest in GaN, GaAs, SiC and related alloys on silicon substrates
indicates the worldwide importance of these materials and devices.
This book represents the latest technical advancements and
information on III-V materials and devices on silicon substrates
from universities, national laboratories and industries worldwide.
Topics include: GaN-based electronic devices and sensors on
silicon; GaN-based optical devices on silicon; GaN and related
alloys on silicon growth and integration techniques; conventional
III-V materials and devices on silicon; and silicon and other
materials on silicon.
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