This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

Charlotte Bronte's Atypical Typology traces Charlotte Bronte's reinscription of the Bible through her four novels, paying special attention to her use of three strategies: gender reversal; the undermining of traditional notions of God's providential control of human history; and the recasting of several "otherworldly" locales into settings within this world. Although many scholars acknowledge the importance of Bronte's use of biblical material, and a few may scrutinize specific passages, the full body of Bronte's adult work has never been examined in this manner. Indeed, a full understanding of her fiction, as well as her significance within the Victorian era, cannot be reached apart from such an exploration. Teachers and students of the Victorian novel in general as well as readers interested in early feminist perspectives will benefit from learning to read the Bible in the light of Charlotte Bronte's approach.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.