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A combination of the materials science, manufacturing processes,
and pioneering research and developments of SiGe and strained-Si
have offered an unprecedented high level of performance enhancement
at low manufacturing costs. Encompassing all of these areas,
Strained-Si Heterostructure Field Effect Devices addresses the
research needs associated with the front-end aspects of extending
CMOS technology via strain engineering. The book provides the basis
to compare existing technologies with the future technological
directions of silicon heterostructure CMOS.
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