Vol. 2 of "Progress in Materials Analysis" contains the lectures of the 12th Colloquium on Materials Analysis, Vienna, May 13-15, 1985. Due to the top level international participation from industry and research insti tutions the proceedings offer a survey of the present state and current trends in materials analysis of high actuality. The major topics covered are surface, micro and trace analysis of materials with a special emphasis on metals but also including other materials like ceramics, semiconductors, polymers. According to the strategy of the meeting attention is focussed on an interdisciplinary approach to materials science - combining analytical chemistry, solid state physics and technol ogy. Therefore progress reports on modern analytical technique like SIMS, SNMS, AES, XPS, Positron Annihilation Spectroscopy, EPMA, STEM, LAMMS, etc. are contained as well as presentations on the development of materials. The majority of the contributions centers on the treatment of important problems in materials science and technology by a (mostly sophisticated) combination of physical and chemical analytical techniques. Vienna, July 1985 M. Grasserbauer Contents Page Hercules, D. M. Surface Characterization of Thin Organic Films on Metals ............................................. ."

The 11th Colloquium on Metallurgical Analysis - a joint venture of the Institute of Analytical Chemistry of the Technical University in Vienna, the Austrian Society for Analytical Chemistry and Microchemistry, the German Metals Society (DGM), and the Society of German Iron and Steel Engineers (VDEh) - was attended by 120 scientists from 12 nations. The major topics covered were surface, micro and trace analysis of materials with a heavy emphasis on metals. According to the strategy of the meeting attention was focussed on an interdisciplinary approach to materials science - combining analytical chemistry, solid state physics and tech nology. Therefore progress reports on analytical techniques (like SIMS, SNMS, Positron Annihilation Spectroscopy, AES, XPS) were given as well as pre sentations on the development of materials (like for the fusion reactor). The majority of the discussion papers centered on the treatment of important technical problems in materials science and technology by a (mostly sophis ticated) combination of physical and chemical analytical techniques. The intensive exchange of ideas and results between the scientists oriented towards basic research and the industrial materials technologists was very fruitful and resulted in the establishment of several scientific cooperations. Major trends in materials analysis were also dealt with in a plenary discussion of which a short summary is contained in this volume. In order to facilitate international communication in the field of materials analysis and in view of the important questions treated in the various contri butions this proceedings volume was edited in English."

th This proceedings volume of the 8 International Microchemical Symposium contains the plenary and keynote lectures delivered at the conference. Besides basic and historic aspects the following major topics are covered: "Microchemistry Arts and Archeology" in "Microchemistry in Life Sciences" "Microchemistry Sciences" in Environmental "Microchemistry in Material Sciences" "Instrumentation, Methods and Automation in Microchemistry." The papers show the present state of microchemistry and the development of this field since the pioneer days of Fritz Pregl and Friedrich Emich. Today microchemistry is a different science as compared to the Pregl and Emich days, for it combines many disciplines like chemistry, physics, mathematics, informatics, biology and does not only mean microanalysi- even if it is still predominant and the best tool for elucidation of the microcosmos. Due to this development modern microchemistry plays an important role in science and technology. It had been the intention of the Scientific th Executive Committee to demonstrate this at the 8 International Micro chemical Symposium with the goal to encourage interdisciplinary communication and stimulate discussion."

In Anbetracht der rasch wachsenden Bedeutung der Oberflachenanalytik schien es angebracht, die drei Methoden, welche bereits in einem sehr hohen Masse fur die industrielle und forschungsbezogene Routineanalytik eingesetzt und haufig mit- einander kombiniert werden, namlich SIMS, AES und XPS in einer Monographie darzustellen. Um die notwendige Tiefe der Darstellung zu erreichen, wurde dieses Buch nicht von einem Autor verfasst, sondern greift auf drei verschiedene Autoren mit unter- schiedlichen Spezialkenntnissen zuruck. Dies garantiert dem Leser die direkte Ver- mittlung von theoretischem und experimentellem Wissen auf entsprechendem Niveau fur die jeweiligen methodischen Teilgebiete. Anderseits ergeben sich dadurch gewisse Unterschiede in der Darstellungsweise und Symbolik zwischen den drei Kapiteln. Dies ist aber sicherlich von untergeordneter Bedeutung im Vergleich zu der durch Experten zu vermittelnden inhaltlichen Substanz. Die einzelnen Kapitel behandeln SIMS, AES und XPS hinsichtlich methodischem Prinzip, physikalischen Grundlagen, Geratetechnik, amilytischem Informationsgehalt, qualitativer und quantitativer Analyse und praktischem Einsatz fur aktuelle Frage- stellungen der Oberflachenanalyse von Festkoerpern - insbesondere aus dem Bereich der Werkstoffentwicklung. Die in den einzelnen Kapiteln angefuhrten Ergebnisse wurden im ubrigen mit Hochleistungsgeraten der neuesten Generation erhalten, so dass der derzeitig aktuelle Leistungsstand der- Methodik dargestellt wird. Der Leser soll damit nicht nur eine Methode im Detail kennenlernen koennen, sondern auch durch die Anfuhrung zahlreicher fur das experimentelle Arbeiten wichtiger Daten einen Einstieg in den praktischen Einsatz der Methoden erhalten.

This book presents, for the first time, a comprehensive survey of analytical techniques currently used in support of all stages of microelectronic materials and device processing. The diversity of topics covered in this book has been achieved by bringing together an international field of authors contributing specialized individual chapters. This has ensured that each technique is discussed in detail giving in-depth treatments of the subject matter. A particularly helpful feature in this book is the concise technical summary given at the end of each section. Four major areas are considered in this volume:

• Bulk analysis of microelectronic materials

• Analysis of surfaces, interfaces and thin films

• Structure analysis on an atomic scale

• Characterization of physical, electrical and topographic features

Complete with over 400 illustrations, this volume is an indispensible guide to analytical support for the microelectronic industry.