Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world's first InP/GaInAs superlattice that was fabricated by the author - this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors. Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD.

This timely work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice technologies for long wavelength infrared detection. Featuring insightful contributions from researchers working at the "cutting edge" of this exciting field, this volume is sure to become an essential reference for advanced graduate students and researchers alike.

Addressing the growing demand for larger capacity in information technology, VLSI Micro- and Nanophotonics: Science, Technology, and Applications explores issues of science and technology of micro/nano-scale photonics and integration for broad-scale and chip-scale Very Large Scale Integration photonics. This book is a game-changer in the sense that it is quite possibly the first to focus on "VLSI Photonics."

Very little effort has been made to develop integration technologies for micro/nanoscale photonic devices and applications, so this reference is an important and necessary early-stage perspective on this field. New demand for VLSI photonics brings into play various technological and scientific issues, as well as evolutionary and revolutionary challenges?all of which are discussed in this book. These include topics such as miniaturization, interconnection, and integration of photonic devices at micron, submicron, and nanometer scales.

With its "disruptive creativity" and unparalleled coverage of the photonics revolution in information technology, this book should greatly impact the future of micro/nano-photonics and IT as a whole. It offers a comprehensive overview of the science and engineering of micro/nanophotonics and photonic integration. Many books on micro/nanophotonics focus on understanding the properties of individual devices and their related characteristics. However, this book offers a full perspective from the point of view of integration, covering all aspects of benefits and advantages of VLSI-scale photonic integration?the key technical concept in developing a platform to make individual devices and components useful and practical for various applications.

The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering research, an authoritative overview of the development of the MOCVD technique, and the technique's impact on the development of new materials, devices, and their applications.
Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines DEGREESIin- and DEGREESIex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials.

Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.

Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.

Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication.

Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.

Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication

Covers wide range of topics in the same style and in the same notation

Most up to date developments in semiconductor physics and nano-engineering

Mathematical derivations are carried through in detail with emphasis on clarity

Timely application areas such as biophotonics, bioelectronics

This book is a collection of diverse research activities on antimony where 12 groups of prominent authors from different part of the worlds presented their latest achievement on antimony-related materials. In the past, despite being widely known and utilized by many countries and cultures, antimony's status as an alchemical substance and its high toxicity have obscured understanding of the material, resulting in controversial usage of antimony, especially in medicine. Today, knowledge about antimony compounds has tremendously increased, and the application range of antimony has become much wider. Due to the diversity of the applications of antimony, researchers may stay focused on their own field while lacking familiarity with antimony-related activities in other fields.

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP InP, GaInAsP GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world s first InP/GaInAs superlattice that was fabricated by the author this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors.

Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD.

This timely work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice technologies for long wavelength infrared detection. Featuring insightful contributions from researchers working at the "cutting edge" of this exciting field, this volume is sure to become an essential reference for advanced graduate students and researchers alike.