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The MOCVD Challenge - A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Paperback, 2nd edition)
Loot Price: R2,307
Discovery Miles 23 070
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The MOCVD Challenge - A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Paperback, 2nd edition)
Series: Electronic Materials and Devices Series
Expected to ship within 12 - 17 working days
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Written by one of the driving forces in the field, The MOCVD
Challenge is a comprehensive review covering GaInAsP-InP,
GaInAsP-GaAs, and related material for electronic and photonic
device applications. These III-V semiconductor compounds have been
used to realize the electronic, optoelectronic, and quantum devices
that have revolutionized telecommunications. The figure on the back
cover gives the energy gap and lattice parameter for the entire
compositional range of the binary, ternary, and quaternary
combinations of these III-V elements. By understanding the material
and learning to control the growth new devices become possible: the
front cover shows the world's first InP/GaInAs superlattice that
was fabricated by the author - this has gone on to be the basis of
modern quantum devices like quantum cascade lasers and quantum dot
infrared photodetectors. Now in its second edition, this updated
and combined volume contains the secrets of MOCVD growth, material
optimization, and modern device technology. It begins with an
introduction to semiconductor compounds and the MOCVD growth
process. It then discusses in situ and ex situ characterization for
MOCVD growth. Next, the book examines in detail the specifics of
the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It
examines MOCVD growth of various III-V heterojunctions and
superlattices and discusses electronic and optoelectronic devices
realized with this material. Spanning 30 years of research, the
book is the definitive resource on MOCVD.
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