0
Your cart

Your cart is empty

Books > Professional & Technical > Energy technology & engineering > Electrical engineering

Buy Now

The MOCVD Challenge - A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Paperback, 2nd edition) Loot Price: R2,307
Discovery Miles 23 070
The MOCVD Challenge - A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition...

The MOCVD Challenge - A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Paperback, 2nd edition)

Manijeh Razeghi

Series: Electronic Materials and Devices Series

 (sign in to rate)
Loot Price R2,307 Discovery Miles 23 070 | Repayment Terms: R216 pm x 12*

Bookmark and Share

Expected to ship within 12 - 17 working days

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world's first InP/GaInAs superlattice that was fabricated by the author - this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors. Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD.

General

Imprint: Crc Press
Country of origin: United Kingdom
Series: Electronic Materials and Devices Series
Release date: June 2017
First published: 2011
Authors: Manijeh Razeghi
Dimensions: 234 x 156mm (L x W)
Format: Paperback
Pages: 800
Edition: 2nd edition
ISBN-13: 978-1-138-11493-7
Categories: Books > Science & Mathematics > Physics > Optics (light)
Books > Professional & Technical > Environmental engineering & technology > General
Books > Science & Mathematics > Biology, life sciences > Life sciences: general issues > General
Books > Professional & Technical > Energy technology & engineering > Electrical engineering > General
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Microwave technology
LSN: 1-138-11493-6
Barcode: 9781138114937

Is the information for this product incomplete, wrong or inappropriate? Let us know about it.

Does this product have an incorrect or missing image? Send us a new image.

Is this product missing categories? Add more categories.

Review This Product

No reviews yet - be the first to create one!

Partners