GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs."

Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi cine, dentistry, solid state lighting, displays, dense data storage, and semi conductor manufacturing. One of the most important applications is in sys tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow erful visible high-brightness LEDs and we expect that similar improvements will be achieved in solid-state UV technology."

Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi cine, dentistry, solid state lighting, displays, dense data storage, and semi conductor manufacturing. One of the most important applications is in sys tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow erful visible high-brightness LEDs and we expect that similar improvements will be achieved in solid-state UV technology."

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different 'species' in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.

This book brings together seven selected best papers presented at the 2014 Russia-Japan-USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17-21 June 2014.As the third in the series of annual meetings, RJUS TeraTech-2014 continues to be an excellent platform for researchers to exchange their recent original results, and to deal with the technical challenges and barriers of transitioning the research results into the THz system-level applications. The symposium focuses on 2 main areas, namely, interaction of THz radiation with micro- and nano-structures, and advanced solid-state THz emitters and sensors. Leading experts from academia, industry, and government agencies from three countries, including USA, Japan, and Russia, contributed to the collection of research results and developments.This book, covering issues ranging from basic Thz-related phenomena to applications in sensing, imaging, and communications, contains some ground-breaking works in the industry, and will be a useful reference for device and electronics engineers and scientists.

This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.