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GaAs devices and integrated circuits have emerged as leading
contenders for ultra-high-speed applications. This book is intended
to be a reference for a rapidly growing GaAs community of
researchers and graduate students. It was written over several
years and parts of it were used for courses on GaAs devices and
integrated circuits and on heterojunction GaAs devices developed
and taught at the University of Minnesota. Many people helped me in
writing this book. I would like to express my deep gratitude to
Professor Lester Eastman of Cornell University, whose ideas and
thoughts inspired me and helped to determine the direction of my
research work for many years. I also benefited from numerous
discussions with his students and associates and from the very
atmosphere of the pursuit of excellence which exists in his group.
I would like to thank my former and present co-workers and
colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute
of Physics and Technology, Professor Melvin Shaw of Wayne State
University, Dr. Kastalsky of Bell Communi cations, Professor Gary
Robinson of Colorado State University, Professor Tony Valois, and
Dr. Tim Drummond of Sandia Labs-for their contributions to our
joint research and for valuable discussions. My special thanks to
Professor Morko.;, for his help, his ideas, and the example set by
his pioneering work. Since 1978 I have been working with engineers
from Honeywell, Inc.-Drs."
Infrared and visible light LEDs and photodetectors have found
numerous applications and have become a truly enabling technology.
The promise of solid state lighting has invigorated interest in
white light LEDs. Ultraviolet LEDs and solar blind photodetectors
represent the next frontier in solid state emitters and hold
promise for many important applications in biology, medi cine,
dentistry, solid state lighting, displays, dense data storage, and
semi conductor manufacturing. One of the most important
applications is in sys tems for the identification of hazardous
biological agents. Compared to UV lamps, UV LEDs have lower power
consumption, a longer life, compactness, and sharper spectral
lines. UV LEDs can provide a variety of UV spectra and have shape
and form factor flexibility and rugged ness. Using conventional
phosphors, UV LEDs can generate white light with high CRI and high
efficiency. If quantum cutter phosphors are developed, white light
generation by UV LEDs might become even more efficient. Advances in
semiconductor materials and in improved light extraction techniques
led to the development of a new generation of efficient and pow
erful visible high-brightness LEDs and we expect that similar
improvements will be achieved in solid-state UV technology."
Infrared and visible light LEDs and photodetectors have found
numerous applications and have become a truly enabling technology.
The promise of solid state lighting has invigorated interest in
white light LEDs. Ultraviolet LEDs and solar blind photodetectors
represent the next frontier in solid state emitters and hold
promise for many important applications in biology, medi cine,
dentistry, solid state lighting, displays, dense data storage, and
semi conductor manufacturing. One of the most important
applications is in sys tems for the identification of hazardous
biological agents. Compared to UV lamps, UV LEDs have lower power
consumption, a longer life, compactness, and sharper spectral
lines. UV LEDs can provide a variety of UV spectra and have shape
and form factor flexibility and rugged ness. Using conventional
phosphors, UV LEDs can generate white light with high CRI and high
efficiency. If quantum cutter phosphors are developed, white light
generation by UV LEDs might become even more efficient. Advances in
semiconductor materials and in improved light extraction techniques
led to the development of a new generation of efficient and pow
erful visible high-brightness LEDs and we expect that similar
improvements will be achieved in solid-state UV technology."
GaAs devices and integrated circuits have emerged as leading
contenders for ultra-high-speed applications. This book is intended
to be a reference for a rapidly growing GaAs community of
researchers and graduate students. It was written over several
years and parts of it were used for courses on GaAs devices and
integrated circuits and on heterojunction GaAs devices developed
and taught at the University of Minnesota. Many people helped me in
writing this book. I would like to express my deep gratitude to
Professor Lester Eastman of Cornell University, whose ideas and
thoughts inspired me and helped to determine the direction of my
research work for many years. I also benefited from numerous
discussions with his students and associates and from the very
atmosphere of the pursuit of excellence which exists in his group.
I would like to thank my former and present co-workers and
colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute
of Physics and Technology, Professor Melvin Shaw of Wayne State
University, Dr. Kastalsky of Bell Communi cations, Professor Gary
Robinson of Colorado State University, Professor Tony Valois, and
Dr. Tim Drummond of Sandia Labs-for their contributions to our
joint research and for valuable discussions. My special thanks to
Professor Morko.;, for his help, his ideas, and the example set by
his pioneering work. Since 1978 I have been working with engineers
from Honeywell, Inc.-Drs.
Rapid pace of electronic technology evolution and current economic
climate compel a merger of such technical areas as low-power
digital electronics, microwave power circuits, optoelectronics,
etc., which collectively have become the foundation of today's
electronic technology.This Workshop aims at encouraging active
cross-fertilization of the different 'species' in this electronic
planet. The WOFE2015 had gather experts from academia, industry,
and government agencies to review the recent exciting breakthroughs
and their underlying physical mechanisms.This Monographs includes
ten invited articles; cover topics ranging from Ultra-thin silicon
nanowire solar cells, to hydrogen generation under illumination of
GaN-based structures and from ultrafast response of nanoscale
device structures to Power device optimization.
This book brings together seven selected best papers presented at
the 2014 Russia-Japan-USA Symposium on Fundamental and Applied
Problems of Terahertz Devices and Technologies (RJUS
TeraTech-2014), which was held at the University of Buffalo, New
York, USA on 17-21 June 2014.As the third in the series of annual
meetings, RJUS TeraTech-2014 continues to be an excellent platform
for researchers to exchange their recent original results, and to
deal with the technical challenges and barriers of transitioning
the research results into the THz system-level applications. The
symposium focuses on 2 main areas, namely, interaction of THz
radiation with micro- and nano-structures, and advanced solid-state
THz emitters and sensors. Leading experts from academia, industry,
and government agencies from three countries, including USA, Japan,
and Russia, contributed to the collection of research results and
developments.This book, covering issues ranging from basic
Thz-related phenomena to applications in sensing, imaging, and
communications, contains some ground-breaking works in the
industry, and will be a useful reference for device and electronics
engineers and scientists.
This book brings together 11 invited papers from the Workshop on
Frontiers in Electronics (WOFE) 2013 that took place at San Juan,
Puerto Rico, in December 2013. These articles present the
ground-breaking works by world leading experts from CMOS and SOI,
to wide-bandgap semiconductor technology, terahertz technology, and
bioelectronics.WOFE is a bi-annual gathering of leading researchers
from around the world, across multiple disciplines, to share their
results and discuss key issues in the future development of
microelectronics, photonics, and nanoelectronics.The focus of this
volume includes topics ranging from advanced transistors: TFT,
FinFET, TFET, HEMT to Nitride devices, as well as emerging
technologies, devices and materials.This book will be a useful
reference for scientists, engineers, researchers, and inventors
looking for the future research and development direction of
microelectronics, and the trends and technology underpinning these
developments.
This book on gallium nitride (GaN) and associated materials focuses
on advances in basic science, as well as the rapidly maturing
technologies involving blue/green light emitters, detectors and
high-power electronics. A highlight is a report on wide-bandgap
semiconductor research done in Europe. Also reported is the
commercialization of a laser operating at 405nm wavelength with a
4000-hour device lifetime. At 450nm emission wavelength,
significant reductions in lifetime were found, and are believed to
arise from nonideal properties of the InGaN alloy used in the
active layer of the device. Additional topics include: the
significant success of transistors for microwave applications;
improvements in the epitaxy of GaN, using both selective area
growth techniques (lateral epitaxy overgrowth) and introducing
low-temperature intralayers in the films; advances in both
molecular beam epitaxy and metal-organic vapor phase epitaxy,
including several studies of quantum dot formation in strained
alloys and improvements in hydride vapor phase epitaxy,
particularly for providing very thick films.
Advanced High Speed Devices covers five areas of advanced device
technology: terahertz and high speed electronics, ultraviolet
emitters and detectors, advanced III-V field effect transistors,
III-N materials and devices, and SiC devices. These emerging areas
have attracted a lot of attention and the up-to-date results
presented in the book will be of interest to most device and
electronics engineers and scientists. The contributors range from
prominent academics, such as Professor Lester Eastman, to key US
Government scientists, such as Dr Michael Wraback.
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