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Showing 1 - 2 of 2 matches in All Departments
Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications
Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications
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