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This book focusses on the spacer engineering aspects of novel
MOS-based device-circuit co-design in sub-20nm technology node, its
process complexity, variability, and reliability issues. It
comprehensively explores the FinFET/tri-gate architectures with
their circuit/SRAM suitability and tolerance to random statistical
variations.
This book focusses on the spacer engineering aspects of novel
MOS-based device-circuit co-design in sub-20nm technology node, its
process complexity, variability, and reliability issues. It
comprehensively explores the FinFET/tri-gate architectures with
their circuit/SRAM suitability and tolerance to random statistical
variations.
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Paperback
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R398
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