This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option.

This book describes the design of fully digital multistandard transmitter front-ends which can directly drive one or more switching power amplifiers, thus eliminating all other analog components. After reviewing different architectures, the authors focus on polar architectures using pulse width modulation (PWM), which are entirely based on unclocked delay lines and other continuous-time digital hardware. As a result, readers are enabled to shift accuracy concerns from the voltage domain to the time domain, to coincide with submicron CMOS technology scaling. The authors present different architectural options and compare them, based on their effect on the signal and spectrum quality. Next, a high-level theoretical analysis of two different PWM-based architectures - baseband PWM and RF PWM - is made. On the circuit level, traditional digital components and design techniques are revisited from the point of view of continuous-time digital circuits. Important design criteria are identified and different solutions are presented, along with their advantages and disadvantages. Finally, two chips designed in nanometer CMOS technologies are described, along with measurement results for validation.

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies.  The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges.  Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.

This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as "power transistor layout" and "4-way parallel-series power combiner", that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.

This book describes the design of fully digital multistandard transmitter front-ends which can directly drive one or more switching power amplifiers, thus eliminating all other analog components. After reviewing different architectures, the authors focus on polar architectures using pulse width modulation (PWM), which are entirely based on unclocked delay lines and other continuous-time digital hardware. As a result, readers are enabled to shift accuracy concerns from the voltage domain to the time domain, to coincide with submicron CMOS technology scaling. The authors present different architectural options and compare them, based on their effect on the signal and spectrum quality. Next, a high-level theoretical analysis of two different PWM-based architectures - baseband PWM and RF PWM - is made. On the circuit level, traditional digital components and design techniques are revisited from the point of view of continuous-time digital circuits. Important design criteria are identified and different solutions are presented, along with their advantages and disadvantages. Finally, two chips designed in nanometer CMOS technologies are described, along with measurement results for validation.

RF Power Amplifiers for Mobile Communications fits in the quest for fully integrated CMOS transceivers. The book tackles both high efficiency and high linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers.

RF Power Amplifiers for Mobile Communications starts from the basic theory of power amplification from the viewpoint of CMOS integration. The design of switching RF power amplifiers in CMOS is explored and CMOS PA design at low supply voltage using parallel amplification is discussed. Combining both efficiency and linearity is one of the major issues in CMOS PA design for wireless and mobile communications and is subsequently tackled. Different linearization techniques and approaches are discussed and polar modulation is clarified in greater detail. Finally, two CMOS PA implementations are thoroughly covered.

RF Power Amplifiers for Mobile Communications offers the reader an intuitive insight in Power Amplification as well as the necessary mathematical background. The book is essential reading for RF design engineers and researchers in the field and is also suitable as a text book for an advanced course on the subject.

RF Power Amplifiers for Mobile Communications fits in the quest for fully integrated CMOS transceivers. The book tackles both high efficiency and high linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers. RF Power Amplifiers for Mobile Communications starts from the basic theory of power amplification from the viewpoint of CMOS integration. The design of switching RF power amplifiers in CMOS is explored and CMOS PA design at low supply voltage using parallel amplification is discussed. Combining both efficiency and linearity is one of the major issues in CMOS PA design for wireless and mobile communications and is subsequently tackled. Different linearization techniques and approaches are discussed and polar modulation is clarified in greater detail.

This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option.

This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as "power transistor layout" and "4-way parallel-series power combiner", that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.