This work addresses the topic of optical networks cross-layer design with a focus on physical-layer-impairment-aware design. Contributors captures both the physical-layer-aware network design as well as the latest advances in service-layer-aware network design. Treatment of topics such as, optical transmissions which are prone to signal impairments, dense packing of wavelengths, dispersion, crosstalk, etc., as well as how to design the network to mitigate such impairments, are all covered.

Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.

"Network Recovery" is the first book to provide detailed information on protecting and restoring communication networks, and it sets a sky-high standard for any that may follow. Inside, you ll learn specific techniques that work at each layer of the networking hierarchy including optical, SONET-SDH, IP, and MPLS as well as multi-layer escalation strategies that offer the highest level of protection. The authors begin with an incisive introduction to the issues that define the field of network protection and restoration, and as the book progresses they explain everything you need to know about the relevant protocols, providing theoretical analyses wherever appropriate. If you work for a network-dependent organization, large or small, you ll want to keep Network Recovery within reach at all times.
* Shows you how to implement protection and recovery techniques that will save your organization time and money.
* Documents techniques for the optical, SONET-SDH, IP, and MPLS layers, as well as multi-layer escalation strategies.
* Shows you how to evaluate these techniques in relation to one another, so you can develop an optimal network recovery design.
* Provides industry examples and simulation results.
* Delves into the inner workings of relevant protocols and offers theoretical analyses wherever this information contributes to your practical knowledge."

This work addresses the topic of optical networks cross-layer design with a focus on physical-layer-impairment-aware design. Contributors captures both the physical-layer-aware network design as well as the latest advances in service-layer-aware network design. Treatment of topics such as, optical transmissions which are prone to signal impairments, dense packing of wavelengths, dispersion, crosstalk, etc., as well as how to design the network to mitigate such impairments, are all covered.

This book constitutes the refereed proceedings of the 10th European Conference on Wireless Sensor Networks, EWSN 2013, held in Ghent, Belgium, in February 2013. The 12 revised full papers presented were carefully reviewed and selected from 51 submissions. The papers cover a wide range of topics in the following areas: experimentation and data access; data management; network algorithms and protocols; and physical layer and hardware aspects.

Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.