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Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (Hardcover, 1995 ed.)
Loot Price: R5,941
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Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (Hardcover, 1995 ed.)
Series: NATO Science Series E:, 298
Expected to ship within 10 - 15 working days
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Significant experimental work is devoted to the preparation of one
and zero dimensional semiconductor structures in view of future
electronic and optical devices which involve quantum effects. The
aim is good control in the realisation of nanometer structures both
in vertical and lateral direction. Conventional processing
techniques based on lithography face inherent problems such as
limited resolution and surface defects caused by reactive ion
etching. During the last few years several research groups started
working on direct syntheses of semiconductor nanostructures by
combining epitaxial growth techniques such as molecular beam
epitaxy and chemical vapour deposition with pre patterning of the
substrate wafers. Another idea is based on island formation in
strained layer heteroepitaxy. Zero and one dimensional structures
with dimensions down to a few atomic distances have been realised
this way. An important point is that the size of the quantum
structures is controlled within the epitaxial deposition in a
self-adjusting process. The main subjects of the book are:
Theoretical aspects of epitaxial growth, selfassembling
nanostructures and cluster formation, epitaxial growth in tilted
and non-(001) surfaces, cleaved edge overgrowth, nanostructure
growth on patterned silicon substrates, nanostructures prepared by
selective area epitaxy or growth on patterned substrates, in-situ
etching and device applications based on epitaxial regrowth on
patterned substrates. The experimental work mainly concentrated on
GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor
heterostructures. Growth related problems received special
attention. The different concepts for preparation of low
dimensional structures are presented to allow direct comparison and
to identify new concepts for future research work.
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