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Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (Hardcover, 1995 ed.) Loot Price: R5,941
Discovery Miles 59 410
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (Hardcover, 1995 ed.): K. Eberl,...

Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (Hardcover, 1995 ed.)

K. Eberl, Pierre M Petroff, Piet Demeester

Series: NATO Science Series E:, 298

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Loot Price R5,941 Discovery Miles 59 410 | Repayment Terms: R557 pm x 12*

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Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.

General

Imprint: Springer
Country of origin: Netherlands
Series: NATO Science Series E:, 298
Release date: July 2003
First published: 1995
Editors: K. Eberl • Pierre M Petroff • Piet Demeester
Dimensions: 235 x 155 x 23mm (L x W x T)
Format: Hardcover
Pages: 386
Edition: 1995 ed.
ISBN-13: 978-0-7923-3679-2
Categories: Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Metals technology / metallurgy
Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Industrial chemistry > Powder technology
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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LSN: 0-7923-3679-8
Barcode: 9780792336792

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