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This edited volume is intended to address in a comprehensive and
integrated manner three major areas of national and international
security research from an information systems-centric perspective:
legal and policy frameworks; intelligence and security informatics;
and emergency preparedness and infrastructure protection. The
discussions are replete with real-world case studies and examples
that present the concepts using an integrated, action-oriented and
theory-based approach to validate the frameworks presented and to
provide specific insights on the technical approaches and
organizational issues under investigation.
This book is intended to be used as both a textbook and a
comprehensive research handbook. The contributors to this edited
volume are renowned experts in their respective fields. Most of the
chapters contained in this book provide an updated comprehensive
survey of the related field and also specific findings from
cutting-edging innovative research. To facilitate its adoption as a
textbook, all the authors have included specific discussion
questions that could be utilized to stimulate discussions and
potentially further research in the area.
*Addresses three major areas of national and international security
research from an information systems-centric perspective
*Focuses on legal and policy frameworks, intelligence and security
informatics, and emergency preparedness and infrastructure
protection
*Real-world case studies are used as examples to provide specific
insights
The past five years have witnessed some dramatic developments in
the general area of ferroelectric thin films materials and devices.
Ferroelectrics are not new materials by any stretch ofimagination.
Indeed, they have been known since the early partofthis century and
popular ferroelectric materials such as Barium Titanate have been
in use since the second world war. In the late sixties and
seventies, a considerable amountofresearch and development effort
was made to create a solid state nonvolatile memory using
ferroelectrics in a vary simple matrix-addressed scheme. These
attempts failed primarily due to problems associated with either
the materials ordue to device architectures. The early eighties saw
the advent of new materials processing approaches, such as sol-gel
processing, that enabled researchers to fabricate sub-micron thin
films of ferroelectric materials on a silicon substrate. These
pioneering developments signaled the onsetofa revival in the
areaofferroelectric thin films, especially ferroelectric
nonvolatile memories. Research and development effort in
ferroelectric materials and devices has now hit a feverish pitch,
Many university laboratories, national laboratories and advanced
R&D laboratories oflarge IC manufacturers are deeply involved
in the pursuit of ferroelectric device technologies. Many companies
worldwide are investing considerable manpower and resources into
ferroelectric technologies. Some have already announced products
ranging from embedded memories in micro controllers, low density
stand-alone memories, microwave circuit elements, andrf
identification tags. There is now considerable optimism that
ferroelectric devices andproducts will occupy a significant
market-share in the new millennium.
The past five years have witnessed some dramatic developments in
the general area of ferroelectric thin films materials and devices.
Ferroelectrics are not new materials by any stretch ofimagination.
Indeed, they have been known since the early partofthis century and
popular ferroelectric materials such as Barium Titanate have been
in use since the second world war. In the late sixties and
seventies, a considerable amountofresearch and development effort
was made to create a solid state nonvolatile memory using
ferroelectrics in a vary simple matrix-addressed scheme. These
attempts failed primarily due to problems associated with either
the materials ordue to device architectures. The early eighties saw
the advent of new materials processing approaches, such as sol-gel
processing, that enabled researchers to fabricate sub-micron thin
films of ferroelectric materials on a silicon substrate. These
pioneering developments signaled the onsetofa revival in the
areaofferroelectric thin films, especially ferroelectric
nonvolatile memories. Research and development effort in
ferroelectric materials and devices has now hit a feverish pitch,
Many university laboratories, national laboratories and advanced
R&D laboratories oflarge IC manufacturers are deeply involved
in the pursuit of ferroelectric device technologies. Many companies
worldwide are investing considerable manpower and resources into
ferroelectric technologies. Some have already announced products
ranging from embedded memories in micro controllers, low density
stand-alone memories, microwave circuit elements, andrf
identification tags. There is now considerable optimism that
ferroelectric devices andproducts will occupy a significant
market-share in the new millennium."
The book presents select proceedings of the 8th International and
29th All India Manufacturing Technology, Design and Research
(AIMTDR 2021) conference. It covers recent advances in the realms
of electro- physical and chemical machining, machining
optimization, surface morphology and sustainable machining. The
contents also include precision engineering, metrology and quality,
automation and smart systems, enterprise manufacturing
intelligence, among others. This book will evoke interest among
academicians, researchers, and practicing engineers who aspire to
comprehend advances pertaining to the domain of modern machining
processes
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