This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980's. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed "cooking recipes" for selected material systems are offered.

The basic and applied science of electroceramic thin films constitute one of the fast interdisciplinary evolving fields of research worldwide. A major driving force for the extensive research being performed in many Universities and Industrial and National Laboratories is the promise of applications of electroceramic thin ftlms into a whole new generation of advanced microdevices that may revolutionize various technologies and create new multibillion dollar markets. Properties of electroceramic thin films that are being intensively investigated include electrical conductivity, ferroelectricity, piezoelectricity, pyroelectricity, electro-optic activity, and magnetism. Perhaps the most publicized application of electroceramics is that related to the new high temperature superconducting (HTSC) materials, which has been extensively discussed in numerous national and international conferences, including NATO/ASI's and ARW's. Less glamorously publicized applications, but as important as those of HTSC materials, are those involving the other properties mentioned above, which were the subject of this ARW. Investigation on ferroelectric thin films has experienced a tremendous development in recent years due to the advent of sophisticated film synthesis techniques and a substantial improvement in the understanding of the related materials science and implementation of films in various novel devices. A major driving force behind the progress in this interdisciplinary field of research is the promise of the development of a new generation of non-volatile memories with long endurance and fast access time that can overcome the problems encountered in the semiconductor non-volatile memory of ferroelectric materials as high technology.

The basic and applied science of electroceramic thin films constitute one of the fast interdisciplinary evolving fields of research worldwide. A major driving force for the extensive research being performed in many Universities and Industrial and National Laboratories is the promise of applications of electroceramic thin ftlms into a whole new generation of advanced microdevices that may revolutionize various technologies and create new multibillion dollar markets. Properties of electroceramic thin films that are being intensively investigated include electrical conductivity, ferroelectricity, piezoelectricity, pyroelectricity, electro-optic activity, and magnetism. Perhaps the most publicized application of electroceramics is that related to the new high temperature superconducting (HTSC) materials, which has been extensively discussed in numerous national and international conferences, including NATO/ASI's and ARW's. Less glamorously publicized applications, but as important as those of HTSC materials, are those involving the other properties mentioned above, which were the subject of this ARW. Investigation on ferroelectric thin films has experienced a tremendous development in recent years due to the advent of sophisticated film synthesis techniques and a substantial improvement in the understanding of the related materials science and implementation of films in various novel devices. A major driving force behind the progress in this interdisciplinary field of research is the promise of the development of a new generation of non-volatile memories with long endurance and fast access time that can overcome the problems encountered in the semiconductor non-volatile memory of ferroelectric materials as high technology.

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.