This volume contains the papers presented at the NATO Advanced Research Workshop on "Magnetism and Structure in Systems of Reduced Dimension," held at l'Institut d'Etudes Scientifiques de Cargese - U.M.S. - C.N.R.S. - Universite de Corte Universite de Nice Sophia - Antipolis during June 15-19, 1992. The ordering of papers in the volume reflects the sequence of papers presented at the workshop. The aim was not to segregate the papers into rigidly defmed areas but to group the papers into small clusters, each cluster having a common theme. In this way the parallel, rather than serial, development of areas such as preparation of films, magnetic and structural characterization was highlighted. Indeed the success of the field depends on such parallel development and is assisted by workshops of this nature and the international collaborations which they foster. The organizers and participants of the NATO workshop express their thanks to Mme. Marie-France Hanseier and the staff at l'Institut d'Etudes Scientifiques de Cargese U.M.S. - C.N.R.S. - Universite de Corte - Universite de Nice Sophia - Antipolis for making the workshop and local arrangements a memorable success. Warm thanks are also expressed to Varadachari Sadagopan and Pascal Stefanou for their encouragement and help in making the workshop a reality. We are also grateful to Kristl Hathaway, Larry Cooper and Gary Prinz for advice in developing the workshop program."

This volume contains the papers presented at the NATO Advanced Research Workshop on "Magnetism and Structure in Systems of Reduced Dimension," held at l'Institut d'Etudes Scientifiques de Cargese - U.M.S. - C.N.R.S. - Universite de Corte Universite de Nice Sophia - Antipolis during June 15-19, 1992. The ordering of papers in the volume reflects the sequence of papers presented at the workshop. The aim was not to segregate the papers into rigidly defmed areas but to group the papers into small clusters, each cluster having a common theme. In this way the parallel, rather than serial, development of areas such as preparation of films, magnetic and structural characterization was highlighted. Indeed the success of the field depends on such parallel development and is assisted by workshops of this nature and the international collaborations which they foster. The organizers and participants of the NATO workshop express their thanks to Mme. Marie-France Hanseier and the staff at l'Institut d'Etudes Scientifiques de Cargese U.M.S. - C.N.R.S. - Universite de Corte - Universite de Nice Sophia - Antipolis for making the workshop and local arrangements a memorable success. Warm thanks are also expressed to Varadachari Sadagopan and Pascal Stefanou for their encouragement and help in making the workshop a reality. We are also grateful to Kristl Hathaway, Larry Cooper and Gary Prinz for advice in developing the workshop program."

Molecular beam epitaxy was initially developed by J.R.Arthur and A.Y. Choover 20years ago for growth of GaAs and GaAs-AlxGa1-xAs heterostructures. It has subsequently been extended to an ever-widening variety of materials while maintaining key advantages over other techniques of epitaxial film growth such as chemical vapor deposition (CVD), liquid phase epitaxy (LPE), metal-organic vapor phase epitaxy (MOVPE) and related techniques. These advantages include the ability to control growth reproducibly to atomic monolayer dimensions and to monitor the growth process in real time. For example, the ultra-high vacuum growth environment of MBE makes it possible to study the dynamics of the growth process itself using modulated molecular beam techniques and RHEED (reflection high energy electron diffraction). In addition, other in situ techniques such as XPD (x-ray photoelectron diffraction) can be used to examine the formation of interfaces and film growth modes.

In this volume the Editor and Contributors have set out to describe the use of MBE for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

Featuring 71 papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume focuses on the rapidly expanding scientific interest in growing materials with fundamentally different crystal structures, one upon the other, to achieve a wider range of available thin film materials and heterostructures for novel thin film applications ranging from magnetic recording to high Tc superconductors to novel metal/semiconductor heterojunction devices. Topics discussed include: novel heteroepitaxial systems; growth morphology; in situ and ex situ characterization; epitaxial metastability; interfacial phases and chemical effects; Si/Ge and III-V/Si; and strain effects.