Molecular beam epitaxy was initially developed by J.R.Arthur and
A.Y. Choover 20years ago for growth of GaAs and GaAs-AlxGa1-xAs
heterostructures. It has subsequently been extended to an
ever-widening variety of materials while maintaining key advantages
over other techniques of epitaxial film growth such as chemical
vapor deposition (CVD), liquid phase epitaxy (LPE), metal-organic
vapor phase epitaxy (MOVPE) and related techniques. These
advantages include the ability to control growth reproducibly to
atomic monolayer dimensions and to monitor the growth process in
real time. For example, the ultra-high vacuum growth environment of
MBE makes it possible to study the dynamics of the growth process
itself using modulated molecular beam techniques and RHEED
(reflection high energy electron diffraction). In addition, other
in situ techniques such as XPD (x-ray photoelectron diffraction)
can be used to examine the formation of interfaces and film growth
modes.
In this volume the Editor and Contributors have set out to
describe the use of MBE for a range of key materials systems which
are of interest for both technological and fundamental reasons.
Prior books on MBE have provided an introduction to the basic
concepts and techniques of MBE and emphasize growth and
characterization of GaAs-based structures. The aim in this book is
somewhat different; it is to demonstrate the versatility of the
technique by showing how it can be utilized to prepare and explore
a range of distinct and diverse materials. For each of these
materials systems MBE has played a key role both in their
development and application to devices.
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