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Kinetic Studies in GeO2/Ge System: A Retrospective from 2021
investigates reaction kinetics in GeO2/Ge systems, aiming to
demonstrate the fundamentals of the GeO2/Ge interface and to give
insight into the distinctive features and performance of Ge
(germanium) applied to advanced complementary metal oxide
semiconductor (CMOS) devices. This book first reviews the
development of MOS technology and discusses the potentials of
emerging Ge and the challenges facing it as a contentious channel
material, once promising to replace Si (silicon) for advanced
nodes. The study systematically analyzes the following aspects of
GeO2/Ge stacks that will shed light on the characteristics and
reaction principles of the system: GeO2/Ge degradation, Ge
passivation techniques, desorption kinetics of GeO from GeO2/Ge,
the relationship between GeO2 crystallization and GeO2/Ge interface
reaction, and the oxidation kinetics of Ge. Based on findings from
the intrinsic properties of GeO2/Ge, the author also compares it
with prevalent SiO2/Si systems and demonstrates the essential
differences between the two, contributing to quality control,
process optimization, and technology advancements of GeO2/Ge. The
book will be a useful reference for researchers, professionals, and
students interested in electronic materials, condenser matter
physics, microelectronic engineering, and semiconductors.
The electronic device based on Metal Oxide Semiconductor (MOS)
structure is the most important component of a large-scale
integrated circuit, and is therefore a fundamental building block
of the information society. Indeed, high quality MOS structure is
the key to achieving high performance devices and integrated
circuits. Meanwhile, the control of interface physics, process and
characterization methods determine the quality of MOS structure.
This book tries to answer five key questions: Why are
high-performance integrated circuits bonded together so closely
with MOS structure? Which physical phenomena occur in MOS
structure? How do these phenomena affect the performance of MOS
structure? How can we observe and quantify these phenomena
scientifically? How to control the above phenomena through process?
Principles are explained based on common experimental phenomena,
from sensibility to rationality, via abundant experimental examples
focusing on MOS structure, including specific experimental steps
with a strong level of operability. This book will be an essential
reference for engineers in semiconductor related fields and
academics and postgraduates within the field of microelectronics.
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