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The Korean American community is one of the major Asian ethnic
subgroups in the United States. Though considered among one of the
model minority groups, excelling academically and professionally,
members in this community are plagued by unaddressed mental health
obstacles. In Understanding Korean Americans' Mental Health: A
Guide to Culturally Competent Practices, Program Developments, and
Policies, the editors, Anderson Sungmin Yoon, Sung Seek Moon, and
Haein Son, examine a variety of mental health issues in the Korean
American community, including depression, suicide, substance abuse,
and trauma, and convincingly connect these challenges to cultural
stigma and racial prejudice. The editors argue that this population
and its mental health needs are neglected by current approaches in
mainstream mental health services. Alarmingly, the very cultural
values that help make up the Korean American community are
contributing to its members' reluctance to seek care, counting both
familial and communal shame among the most pressing culprits. This
book supports these claims with statistical realities and seeks to
gather the relatively scarce research that does exist on this topic
to underscore the heightened prevalence of mental health issues
among Korean Americans, and the contributors make recommendations
for more culturally competent practices, program developments, and
policies.
At nearly 1.9 million, the Korean American community is one of the
major Asian ethnic subgroups in the United States. Though
considered among one of the model minority groups, excelling
academically and professionally, members in this community are
plagued by unaddressed mental health obstacles. In Understanding
Korean Americans' Mental Health: A Guide to Culturally Competent
Practices, Program Developments, and Policies, the editors,
Anderson Sungmin Yoon, Sung Seek Moon, and Haein Son, examine a
variety of mental health issues in the Korean American community,
including depression, anxiety, suicide, substance abuse, and
trauma, and convincingly connect these challenges to cultural
stigma and racial prejudice. The editors argue that this population
and its mental health needs are, to varying degrees, neglected by
current approaches in mainstream mental health services.
Alarmingly, the very cultural values and attitudes that help make
up the Korean American community are contributing to its members'
reluctance to seek care, counting both familial and communal shame
among the most pressing culprits. This book supports these claims
with statistical realities and seeks to gather the relatively
scarce research that does exist on this topic to underscore the
heightened prevalence of mental health issues and related symptoms
among Korean Americans, and the contributors make recommendations
for more culturally competent practices, program developments, and
policies.
This book provides comprehensive coverage of the materials
characteristics, process technologies, and device operations for
memory field-effect transistors employing inorganic or organic
ferroelectric thin films. This transistor-type ferroelectric memory
has interesting fundamental device physics and potentially large
industrial impact. Among various applications of ferroelectric thin
films, the development of nonvolatile ferroelectric random access
memory (FeRAM) has been most actively progressed since the late
1980s and reached modest mass production for specific application
since 1995. There are two types of memory cells in ferroelectric
nonvolatile memories. One is the capacitor-type FeRAM and the other
is the field-effect transistor (FET)-type FeRAM. Although the
FET-type FeRAM claims the ultimate scalability and nondestructive
readout characteristics, the capacitor-type FeRAMs have been the
main interest for the major semiconductor memory companies, because
the ferroelectric FET has fatal handicaps of cross-talk for random
accessibility and short retention time. This book aims to provide
the readers with development history, technical issues, fabrication
methodologies, and promising applications of FET-type ferroelectric
memory devices, presenting a comprehensive review of past, present,
and future technologies. The topics discussed will lead to further
advances in large-area electronics implemented on glass, plastic or
paper substrates as well as in conventional Si electronics. The
book is composed of chapters written by leading researchers in
ferroelectric materials and related device technologies, including
oxide and organic ferroelectric thin films.
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