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Semiconducting oxides and nitrides are becoming the most important
s- jects in materials science. In particular, zinc oxide (ZnO),
gallium nitride (GaN), and related compounds form a novel class of
semiconductors which possess unique properties in terms of
crystallography, crystal growth, op- cal properties, electrical
properties, magnetic properties, and so forth. These
uniquepropertiesmakethesematerialsquiteimportantinoptoelectronicsand
electronics. Although for more than three decades oxide and nitride
semiconductors have been known to possess unique properties, it is
only recently that these materials have been exploited to fabricate
novel electronic and optical - vices, which havenever been possible
with other semiconductors. It should be mentioned that
revolutionary breakthroughs in materials science have been
madebeforethe remarkabledevelopmentofsuchdevices.In particular,
recent breakthrough and advance in epitaxy, bulk growth, and
synthesis of nan- tructures coupled with exploration and
investigation on structural, optical, and electrical properties,
enabled us to achieve novel display, general lig- ing, optical
storage, high-speed, -temperature and -power electronics, bio and
environmental sensors, and energy generating and saving devices.
The unique structure of this book is that each chapter addresses
both oxides and nitrides, which, we believe, will help readers gain
comprehensive and comparative information on oxide and nitride
semiconductors. This book consists of ten chapters, addressing the
basic properties of materials, bulk growth, ?lm growth,
polarityissues, nonpolar?lms, structuraldefects, optical
properties, electrical properties, light emitting diodes, and
nanostructures. Thus the book covers processing, properties, and
applications of materials based on ZnO, GaN, and related compoun
Zinc oxide, ZnO, has been attracting much attention because of its
potential applications in photonic and optoelectronic devices. The
notable properties of ZnO include direct band energy gap (Eg=3.37
eV at RT), large exciton binding energy of 60 meV, and strong
cohesive energy of 1.89 eV. Recent reports on the lasing mechanism
of ZnO have shown that ZnO is a promising photonic material for
exciton devices in the wavelength ranging from blue to ultraviolet.
It is well known that high quality materials are required for
optoelectronic devices. At the current stage the problems in
extending toward ZnO-based device applications are the difficulty
in achieving high crystal quality in either bulk or thin film
dimensions of ZnO, as well as the difficulty in controlling p-type
conductivity. On the other hand, control of the crystalline defects
in naturally n-type ZnO is the critical issue to obtain p-type ZnO.
This book is focused on improving the quality of ZnO films grown by
plasma-assisted molecular beam epitaxy (P-MBE) on c-sapphire with a
MgO buffer layer through optimization of buffer layers and detailed
structural characterization.
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