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Oxide materials are good candidates for replacing Si devices, which
are increasingly reaching their performance limits, since the
former offer a range of unique properties, due to their
composition, design and/or doping techniques. The author introduces
a means of selecting oxide materials according to their functions
and explains metal/oxide interface physics. As he demonstrates,
material development is the key to matching oxide materials to
specific practical applications. In this book, the investigation
and intentional control of metal/oxide interface structure and
electrical properties using data obtained with non-destructive
methods such as x-ray photoelectron spectroscopy (XPS) and x-ray
reflectometry (XRR) are discussed. Further, it shows how oxide
materials can be used to support the development of future
functional devices with high-k, ferroelectric, magnetic and optical
properties. In closing, it explains optical sensors as an
application of metal Schottky contact and metal/oxide resistive
random access memory structure.
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