Nanoscale Redox Reaction at Metal/Oxide Interface - A Case Study on Schottky Contact and ReRAM (Paperback, 1st ed. 2020)

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications. In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.

General

Imprint:	Springer Verlag,Japan
Country of origin:	Japan
Series:	NIMS Monographs
Release date:	May 2020
First published:	2018
Authors:	Takahiro Nagata
Dimensions:	235 x 155mm (L x W)
Format:	Paperback
Pages:	89
Edition:	1st ed. 2020
ISBN-13:	978-4-431-54849-2
Categories:	Books > Professional & Technical > Technology: general issues > Nanotechnology Books > Professional & Technical > Mechanical engineering & materials > Materials science > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > General
LSN:	4-431-54849-1
Barcode:	9784431548492

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