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"Semiconductor-On-Insulator Materials for NanoElectronics
Applications" is devoted to the fast evolving field of modern
nanoelectronics, and more particularly to the physics and
technology of nanoelectronic devices built on
semiconductor-on-insulator (SemOI) systems. The book contains the
achievements in this field from leading companies and universities
in Europe, USA, Brazil and Russia. It is articulated around four
main topics: 1. New semiconductor-on-insulator materials; 2.
Physics of modern SemOI devices; 3. Advanced characterization of
SemOI devices; 4. Sensors and MEMS on SOI.
"Semiconductor-On-Insulator Materials for NanoElectonics
Applications" is useful not only to specialists in nano- and
microelectronics but also to students and to the wider audience of
readers who are interested in new directions in modern electronics
and optoelectronics.
The fascinating pages of this book detail many of the key issues
associated with the scaling to nano-dimensions of
silicon-on-insulator structures.Some papers offer new insight
particularly at the device/circuit interface as appropriate for SOI
which is fast becoming a mainstream technology.One of the key
issues concerns mobility degradation in SOI films less than about
5nm.The advantages of combining scaled SOI devices with high
permittivity (k) dielectric indicates that potential solutions are
indeed available down to the 22nm node.A further key issue and
potential show stopper' for SOI CMOS is highlighted in a number of
invited and contributed papers addressing atomistic level effects.
The book details many of the key issues associated with the scaling
to nano-dimensions of silicon-on-insulator structures. Some papers
offer new insight particularly at the device/circuit interface as
appropriate for SOI which is fast becoming a mainstream technology.
One of the key issues concerns mobility degradation in SOI films
less than about 5nm. The advantages of combining scaled SOI devices
with high permittivity (k) dielectric indicates that potential
solutions are indeed available down to the 22nm node even with 5nm
SOI films. A further key issue and potential show stopper for SOI
CMOS is highlighted in a number of invited and contributed papers
addressing atomistic level effects. Results are presented for Monte
Carlo and drift/diffusion modelling together with device compact
models and circuit level simulation and this provided for a broad
exposure of the problems from intrinsic physics to the circuit
level. The scaling to nano-dimensions takes the technology into the
realms of quantum effects and a number of papers addressed this
aspect from both the technological and physics aspects. The scope
of potential applications for quantum dots, quantum wires and
nanotubes are considered. The use of semiconductor materials other
than Si, on insulator, is featured in some sections of the book.
The potential of III/V, Ge and other materials to facilitate
continuation down the roadmap is illustrated by a review of the
state-of-the-art.
"Semiconductor-On-Insulator Materials for NanoElectronics
Applications is devoted to the fast evolving field of modern
nanoelectronics, and more particularly to the physics and
technology of nanoelectronic devices built on
semiconductor-on-insulator (SemOI) systems. The book contains the
achievements in this field from leading companies and universities
in Europe, USA, Brazil and Russia. It is articulated around four
main topics: 1. New semiconductor-on-insulator materials; 2.
Physics of modern SemOI devices; 3. Advanced characterization of
SemOI devices; 4. Sensors and MEMS on SOI.
"Semiconductor-On-Insulator Materials for NanoElectonics
Applications is useful not only to specialists in nano- and
microelectronics but also to students and to the wider audience of
readers who are interested in new directions in modern electronics
and optoelectronics.
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