Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.