This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

The most commonly used tool for studying gate-oxide quality in detail is the Capacitance-Voltage (iV) technique. iV test results offer a wealth of device and process Information, including bulk and interface charges and many MOS-device parameters.This Project will devote for how to use the Agilent LCR meter (E-4980A) to make iV measurements. It also addresses basic MOS physics, proper iV measurement techniques, and parameter extraction from iV test results. iV measurements are typically made on a capacitor- like device, such as a MOS capacitor (MOS-e. Successful measurements require compensating for stray capacitance, recording capacitance values only at equilibrium conditions, and applying measuring signals in an appropriate sequence. These issues are addressed in my project under result chapter to provide guidance for choosing and/or writing test routines and preparing for iV tests. This work has Introduction (Chapter-1), VEE-Pro Software (Chapter-2), SUPREM Simulation (Chapter-3), Fabrication of MOS(Oxidation) (Chapter-5), Capacitances of MOS (Chapter-6), Record the data of iV curves (Chapter-7) and Conclusion (Chapter-8).