This collection of selected papers presented at the 12th International Conference on Scientific Computing in Electrical Engineering, SCEE 2018, held in Taormina, Sicily, Italy, in September 2018, showcases the state of the art in SCEE. The aim of the SCEE 2018 conference was to bring together scientists from academia and industry, mathematicians, electrical engineers, computer scientists, and physicists, and to promote intensive discussions on industrially relevant mathematical problems, with an emphasis on the modeling and numerical simulation of electronic circuits and of electromagnetic fields. This extensive reference work is divided into five parts: Computational Electromagnetics, Device Modeling and Simulation, Circuit Simulation, Mathematical and Computational Methods, Model Order Reduction. Each part starts with a general introduction, followed by the respective contributions. The book will appeal to mathematicians and electrical engineers. Further, it introduces algorithm and program developers to recent advances in the other fields, while industry experts will be introduced to new programming tools and mathematical methods.

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schroedinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

This collection of selected papers presented at the 12th International Conference on Scientific Computing in Electrical Engineering, SCEE 2018, held in Taormina, Sicily, Italy, in September 2018, showcases the state of the art in SCEE. The aim of the SCEE 2018 conference was to bring together scientists from academia and industry, mathematicians, electrical engineers, computer scientists, and physicists, and to promote intensive discussions on industrially relevant mathematical problems, with an emphasis on the modeling and numerical simulation of electronic circuits and of electromagnetic fields. This extensive reference work is divided into five parts: Computational Electromagnetics, Device Modeling and Simulation, Circuit Simulation, Mathematical and Computational Methods, Model Order Reduction. Each part starts with a general introduction, followed by the respective contributions. The book will appeal to mathematicians and electrical engineers. Further, it introduces algorithm and program developers to recent advances in the other fields, while industry experts will be introduced to new programming tools and mathematical methods.

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schroedinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.