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Charge Transport in Low Dimensional Semiconductor Structures - The Maximum Entropy Approach (Hardcover, 1st ed. 2020)
Loot Price: R2,976
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Charge Transport in Low Dimensional Semiconductor Structures - The Maximum Entropy Approach (Hardcover, 1st ed. 2020)
Series: Mathematics in Industry, 31
Expected to ship within 10 - 15 working days
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This book offers, from both a theoretical and a computational
perspective, an analysis of macroscopic mathematical models for
description of charge transport in electronic devices, in
particular in the presence of confining effects, such as in the
double gate MOSFET. The models are derived from the semiclassical
Boltzmann equation by means of the moment method and are closed by
resorting to the maximum entropy principle. In the case of
confinement, electrons are treated as waves in the confining
direction by solving a one-dimensional Schroedinger equation
obtaining subbands, while the longitudinal transport of subband
electrons is described semiclassically. Limiting energy-transport
and drift-diffusion models are also obtained by using suitable
scaling procedures. An entire chapter in the book is dedicated to a
promising new material like graphene. The models appear to be sound
and sufficiently accurate for systematic use in computer-aided
design simulators for complex electron devices. The book is
addressed to applied mathematicians, physicists, and electronic
engineers. It is written for graduate or PhD readers but the
opening chapter contains a modicum of semiconductor physics, making
it self-consistent and useful also for undergraduate students.
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