A broad and practical reference to IC socket technology

The first and only comprehensive resource on IC (Integrated Circuit) socket technology, IC Component Sockets offers a complete overview of socket technology and design in order to provide engineers and their managers with a good understanding of these specialized technologies and the processes for evaluating them. The authors, both acknowledged experts in the field, address all relevant aspects of the subject-including materials, design, performance characteristics, failure modes and mechanisms, and qualification and reliability assessment-with emphasis on the technology's inherent advantages and challenges.

Topics of interest include:

• Socket design and contact technologies
• Performance characteristics and material properties
• Contact failure modes and mechanisms
• Qualification testing conditions
• Qualification sequences and setup
• IEEE prediction methodology
• Theoretical calculation of contact reliability

Including a list of standards and specifications, this book is an important and timely resource for today's electronics engineers concerned with evaluating and perfecting socket design, manufacture, and use.

In the twenty-first century, democracies across the globe are in crisis. The strength of basic democratic institutions and core enduring political principles and values are eroding in key regions and countries. Authoritarian regimes are rising and populist leaders are emerging. Democracy in Crisis across the World weaves threads of history and politics in two parts to analyze how long this trend may last and what the future may bring. By first examining the state of democracy in Sub-Saharan Africa, Eastern Europe, Western Europe, Latin America, and the Middle East and North Africa, the second part of the collection highlights to democratic trajectory of India, China, Russia, and the United States. Ending with a look at how the world's governments have responded to the coronavirus pandemic, contributors argue that unless democracy is defended with resolution and nurtured with resilience, it will fall.

In the twenty-first century, democracies across the globe are in crisis. The strength of basic democratic institutions and core enduring political principles and values are eroding in key regions and countries. Authoritarian regimes are rising and populist leaders are emerging. Democracy in Crisis across the World weaves threads of history and politics in two parts to analyze how long this trend may last and what the future may bring. By first examining the state of democracy in Sub-Saharan Africa, Eastern Europe, Western Europe, Latin America, and the Middle East and North Africa, the second part of the collection highlights to democratic trajectory of India, China, Russia, and the United States. Ending with a look at how the world's governments have responded to the coronavirus pandemic, contributors argue that unless democracy is defended with resolution and nurtured with resilience, it will fall.

This new edition includes approximately 30% new materials covering the following information that has been added to this important work: extends the contents on Li-ion batteries detailing the positive and negative electrodes and characteristics and other components including binder, electrolyte, separator and foils, and the structure of Li-ion battery cell. Nickel-cadmium batteries are deleted. adds a new section presenting the modelling of multi-mode electrically variable transmission, which gradually became the main structure of the hybrid power-train during the last 5 years. newly added chapter on noise and vibration of hybrid vehicles introduces the basics of vibration and noise issues associated with power-train, driveline and vehicle vibrations, and addresses control solutions to reduce the noise and vibration levels. Chapter 10 (chapter 9 of the first edition) is extended by presenting EPA and UN newly required test drive schedules and test procedures for hybrid electric mileage calculation for window sticker considerations. In addition to the above major changes in this second edition, adaptive charging sustaining point determination method is presented to have a plug-in hybrid electric vehicle with optimum performance.

A systematic, accessible introduction to III–V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III–V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III–V devices—heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III–V Devices offers a variety of features, including:

• An introductory chapter on the basic properties, growth process, and device physics of III–V materials
• Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design
• A discussion of transistor fabrication and device comparison
• 55 worked-out examples illustrating design considerations for a given application
• 215 figures and end-of-chapter practice problems
• Appendices listing parameters for various materials and transistor types

An expert guide to understanding and making optimum use of BSIM

Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4.

Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM’s features. He:

• Summarizes key BSIM3 components
• Represents the BSIM3 model with equivalent circuits for various operating conditions
• Provides a comprehensive glossary of modeling terminology
• Lists alphabetically BSIM3 parameters along with their meanings and relevant equations
• Explores BSIM3’s flaws and provides improvement suggestions
• Describes all of BSIM4’s improvements and new features