Handbook of Silicon Wafer Cleaning Technology, Third Edition, provides an in-depth discussion of cleaning, etching and surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet and plasma processing are reviewed, including surface and colloidal aspects. This revised edition includes the developments of the last ten years to accommodate a continually involving industry, addressing new technologies and materials, such as germanium and III-V compound semiconductors, and reviewing the various techniques and methods for cleaning and surface conditioning. Chapters include numerous examples of cleaning technique and their results. The book helps the reader understand the process they are using for their cleaning application and why the selected process works. For example, discussion of the mechanism and physics of contamination, metal, particle and organic includes information on particle removal, metal passivation, hydrogen-terminated silicon and other processes that engineers experience in their working environment. In addition, the handbook assists the reader in understanding analytical methods for evaluating contamination. The book is arranged in an order that segments the various cleaning techniques, aqueous and dry processing. Sections include theory, chemistry and physics first, then go into detail for the various methods of cleaning, specifically particle removal and metal removal, amongst others.

The second Edition of the Handbook of Silicon Wafer Cleaning Technology is intended to provide knowledge of wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits. The integration of the clean processes into the device manufacturing flow will be presented with respect to other manufacturing steps such as thermal, implant, etching, and photolithography processes. The Handbook discusses both wet and plasma-based cleaning technologies that are used for removing contamination, particles, residue, and photoresist from wafer surfaces. Both the process and the equipment are covered. A review of the current cleaning technologies is included. Also, advanced cleaning technologies that are under investigation for next generation processing are covered; including supercritical fluid, laser, and cryoaerosol cleaning techniques. Additionally theoretical aspects of the cleaning technologies and how these processes affect the wafer is discussed such as device damage and surface roughening will be discussed. The analysis of the wafers surface is outlined. A discussion of the new materials and the changes required for the surface conditioning process used for manufacturing is also included.
Focused on silicon wafer cleaning techniques including wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits.
As this book covers the major technologies for removing contaminants, it is a reliable reference for anyone that manufactures integrated circuits, or supplies the semiconductor and microelectronics industries.
Covers processes and equipment, as well as new materials and changes required for the surface conditioning process.
Editors are two of the top names in the field and are both extensively published.
Discusses next generation processing techniques including supercritical fluid, laser, and cryoaerosol."

Vollstandigkeit erheben. Daneben werden noch zahlreiche Hin- weise sowohl zur Charakterisierung durch Derivate wie auch durch physikalische Methoden gegeben. Wir haben weiterhin den Abschnitt uber "Arbeitsmethoden" und insbesondere die chromatographischen und spektroskopischen Methoden erganzt. Da es aber unmoglich ist, diese Methoden im notwendigen Umfange aufzunehmen, haben wir weiterfuhrende Monographien angefUhrt und an den entsprechenden Stellen zitiert. So findet der Leser bei den einzelnen Verbindungsklassen z. B. bei den Phenolen, den Aminosiiuren, den Aldehydderivaten, welche chromatographische Methoden zur Trennung in einzelne Verbin- dungen geeignet und wo sie beschrieben sind. Es sei noch vermerkt, daB bei der tJberarbeitung einige Substanzen, die inzwischen leicht zuganglich sind, berucksichtigt wurden. Unser Dank gilt den Kollegen, die uns durch wertvolle Hinweise unterstutzt haben, so besonders Herrn Prof. Dr. R. BOCK, Mainz. Herrn Prof. Dr. H.-J. EWHHOFF, Mainz, danken wir fur die Hilfe bei der Abfassung des Abschnittes uber spektroskopische Methoden, und hier besonders fur den Teil uber kernmagnetische Resonanz, und mehreren Unterrichtsassistenten fUr die tJbermittlung ihrer praktischen Erfahrungen. Die Herren Dr. G. K. SCHEUERMANN, Dipl. Chem. V. BOHMER und Dipl. lng. Z. CSU-ROS halfen bei der Klarung vieler Einzelfragen. Ganz besonderen Dank schulden wir Fraulein RITA WEIS fur das verstandnisvolle und sorgsame Lesen der Korrekturen. Der Verlag ist in dankenswerter Weise auf unsere Wunsche mit groBem Verstandnis eingegangen. So hoffen wir, daB auch die siebente Auflage eine gute Aufnahme finden moge.