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The thermal processing of materials ranges from few fem to seconds
by Swift Heavy Ion Implantation to about one second using advanced
Rapid Thermal Annealing. This book offers after an historical
excursus selected contributions on fundamental and applied aspects
of thermal processing of classical elemental semiconductors and
other advanced materials including nanostructures with novel
optoelectronic, magnetic, and superconducting properties. Special
emphasis is given on the diffusion and segregation of impurity
atoms during thermal treatment. A broad range of examples describes
the solid phase and/or liquid phase processing of elemental and
compound semiconductors, dielectric composites and organic
materials.
The thermal processing of materials ranges from few fem to seconds
by Swift Heavy Ion Implantation to about one second using advanced
Rapid Thermal Annealing. This book offers after an historical
excursus selected contributions on fundamental and applied aspects
of thermal processing of classical elemental semiconductors and
other advanced materials including nanostructures with novel
optoelectronic, magnetic, and superconducting properties. Special
emphasis is given on the diffusion and segregation of impurity
atoms during thermal treatment. A broad range of examples describes
the solid phase and/or liquid phase processing of elemental and
compound semiconductors, dielectric composites and organic
materials.
Wo Licht ist, ist auch Schatten! ("More light, more shadow!" or
simpler: "Nothing is perfect") -Johann Wolfgang von Goethe, from
Got .. z von Berlichingen, Act I There exist already about ten
books (e. g. [1-8]) - not counting the many conf-
enceproceedingsvolumes- onthe
differentaspectsofSi-basedphotonicsincluding also the issue of
silicon-basedlight emission. Why is now anotherone neededabout this
subject, and even more, exclusively about a special type of light
emitters? This book summarizes all aspects of the development of
rare earth (RE) c- taining MOS devices fabricated by ion
implantation as the key technology and critically re ects the
related referencesthroughoutthe different chapters. This work was
mainly done in the course of the last 10 years. Preliminary work
for this goal, undertaken mostly in the nineties, was based on the
introduction of group IV e- ments (Si, Ge, Sn) into the thermally
grown silicon dioxide leading to the highest power ef ciency values
in the blue-violet wavelength range. This success inspired us to
use the REs as means of exploring other wavelength ranges with the
same or even higher power ef ciencies. After an historical
introduction of the REs and silicon-based light emission, Chap. 1
presents a review of electroluminescence from MOS-type light
emitters, based on silicon and its technology. The achievement of
an optimized material for electrically driven light emission, that
is, ef cient emission with reasonable reliability, is only possible
with a deep knowledge of the materials properties det-
miningtheelectro-optical(orphotonic)properties(seeChap. 2).
Wo Licht ist, ist auch Schatten! ("More light, more shadow!" or
simpler: "Nothing is perfect") -Johann Wolfgang von Goethe, from
Got .. z von Berlichingen, Act I There exist already about ten
books (e. g. [1-8]) - not counting the many conf-
enceproceedingsvolumes- onthe
differentaspectsofSi-basedphotonicsincluding also the issue of
silicon-basedlight emission. Why is now anotherone neededabout this
subject, and even more, exclusively about a special type of light
emitters? This book summarizes all aspects of the development of
rare earth (RE) c- taining MOS devices fabricated by ion
implantation as the key technology and critically re ects the
related referencesthroughoutthe different chapters. This work was
mainly done in the course of the last 10 years. Preliminary work
for this goal, undertaken mostly in the nineties, was based on the
introduction of group IV e- ments (Si, Ge, Sn) into the thermally
grown silicon dioxide leading to the highest power ef ciency values
in the blue-violet wavelength range. This success inspired us to
use the REs as means of exploring other wavelength ranges with the
same or even higher power ef ciencies. After an historical
introduction of the REs and silicon-based light emission, Chap. 1
presents a review of electroluminescence from MOS-type light
emitters, based on silicon and its technology. The achievement of
an optimized material for electrically driven light emission, that
is, ef cient emission with reasonable reliability, is only possible
with a deep knowledge of the materials properties det-
miningtheelectro-optical(orphotonic)properties(seeChap. 2).
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