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This book presents extensive information on the mechanisms of
epitaxial growth in III-nitride compounds, drawing on a
state-of-the-art computational approach that combines ab initio
calculations, empirical interatomic potentials, and Monte Carlo
simulations to do so. It discusses important theoretical aspects of
surface structures and elemental growth processes during the
epitaxial growth of III-nitride compounds. In addition, it
discusses advanced fundamental structural and electronic
properties, surface structures, fundamental growth processes and
novel behavior of thin films in III-nitride semiconductors. As
such, it will appeal to all researchers, engineers and graduate
students seeking detailed information on crystal growth and its
application to III-nitride compounds.
This book presents extensive information on the mechanisms of
epitaxial growth in III-nitride compounds, drawing on a
state-of-the-art computational approach that combines ab initio
calculations, empirical interatomic potentials, and Monte Carlo
simulations to do so. It discusses important theoretical aspects of
surface structures and elemental growth processes during the
epitaxial growth of III-nitride compounds. In addition, it
discusses advanced fundamental structural and electronic
properties, surface structures, fundamental growth processes and
novel behavior of thin films in III-nitride semiconductors. As
such, it will appeal to all researchers, engineers and graduate
students seeking detailed information on crystal growth and its
application to III-nitride compounds.
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