0
Your cart

Your cart is empty

Browse All Departments
  • All Departments
Price
  • R5,000 - R10,000 (2)
  • -
Status
Brand

Showing 1 - 2 of 2 matches in All Departments

Technology CAD - Computer Simulation of IC Processes and Devices (Hardcover, 1993 ed.): Robert W. Dutton, Zhiping Yu Technology CAD - Computer Simulation of IC Processes and Devices (Hardcover, 1993 ed.)
Robert W. Dutton, Zhiping Yu
R6,542 Discovery Miles 65 420 Ships in 10 - 15 working days

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

Technology CAD - Computer Simulation of IC Processes and Devices (Paperback, Softcover reprint of the original 1st ed. 1993):... Technology CAD - Computer Simulation of IC Processes and Devices (Paperback, Softcover reprint of the original 1st ed. 1993)
Robert W. Dutton, Zhiping Yu
R6,344 Discovery Miles 63 440 Ships in 10 - 15 working days

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models.Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7 considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

Free Delivery
Pinterest Twitter Facebook Google+
You may like...
The Murder Of Ahmed Timol - My Search…
Imtiaz A. Cajee Paperback R280 R259 Discovery Miles 2 590
Insider Trading:The Laws of Europe, the…
Emmanuel Gaillard Hardcover R10,940 Discovery Miles 109 400
Democracy Works - Re-Wiring Politics To…
Greg Mills, Olusegun Obasanjo, … Paperback R320 R290 Discovery Miles 2 900
King - The Life Of Martin Luther King
Jonathan Eig Paperback R565 R472 Discovery Miles 4 720
Perils & Consequences
Rich Votaw, Stan Scott Hardcover R650 Discovery Miles 6 500
The Hartford Whalers
Brian Codagnone Paperback R610 R553 Discovery Miles 5 530
Uranium Resource Processing - Secondary…
Chiranjib Gupta, Harvinderpal Singh Hardcover R8,599 Discovery Miles 85 990
Hockey in Broome County
Marvin A Cohen, Michael J McCann Hardcover R781 R686 Discovery Miles 6 860
Diamond Compendium
DeeDee Cunningham Hardcover R4,471 R3,777 Discovery Miles 37 770
A Grammar of Hup
Patience Epps Hardcover R6,666 Discovery Miles 66 660

 

Partners