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Books > Professional & Technical > Energy technology & engineering > Electrical engineering
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Technology CAD - Computer Simulation of IC Processes and Devices (Paperback, Softcover reprint of the original 1st ed. 1993)
Loot Price: R6,489
Discovery Miles 64 890
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Technology CAD - Computer Simulation of IC Processes and Devices (Paperback, Softcover reprint of the original 1st ed. 1993)
Series: The Springer International Series in Engineering and Computer Science, 243
Expected to ship within 10 - 15 working days
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The rapid evolution and explosive growth of integrated circuit
technology have impacted society more than any other technological
development of the 20th century. Integrated circuits (ICs) are used
universally and the expanding use of IC technology requires more
accurate circuit analysis methods and tools, prompting the
introduction of computers into the design process. The goal of this
book is to build a firm foundation in the use of computer-assisted
techniques for IC device and process design. Both practical and
analytical viewpoints are stressed to give the reader the
background necessary to appreciate CAD tools and to feel
comfortable with their use. Technology CAD - Computer Simulation of
IC Processes and Devices presents a unified discourse on process
and device CAD as interrelated subjects, building on a wide range
of experiences and applications of the SUPREM program. Chapter 1
focuses on the motivation for coupled process and device CAD. In
Chapter 2 SUPREM III is introduced, and process CAD is discussed in
terms of ion-implantation, impurity diffusion, and oxidation
models.Chapter 3 introduces the Stanford device analysis program
SEDAN III (SEmiconductor Device ANalysis). The next three chapters
move into greater detail concerning device operating principles and
analysis techniques. Chapter 4 reviews the classical formulation of
pn junction theory and uses device analysis (SEDAN) both to
evaluate some of the classical assumptions and to investigate the
difficult problem of high level injection. Chapter 5 returns to MOS
devices, reviews the first-order MOS theory, and introduces some
important second-order effects. Chapter 6 considers the bipolar
transistor. Chapter 7 considers the application of process
simulation and device analysis to technology design. The BiCMOS
process is selected as a useful design vehicle for two reasons.
First, it allows the reader to pull together concepts from the
entire book. Second, the inherent nature of BiCMOS technology
offers real constraints and hence trade-offs which must be
understood and accounted for.
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